Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yu. Yu. Kuznetsov"'
Publikováno v:
Semiconductors. 47:298-300
Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90–150 keV. An X-ray rocking curve is used to estimate the cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dc74fa4cca8081c4b0a04fad1cf7779
https://doi.org/10.1134/s1063782613020036
https://doi.org/10.1134/s1063782613020036
Publikováno v:
Semiconductors. 44:1386-1388
The use of the process of solid-phase recrystallization reduces to a great extent the number of defects in the silicon layer. An amorphous layer was formed by implantation of silicon ions. The crystalline quality of the SOS structures has been assess
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4810700856480af398fbefedb9e9c445
https://doi.org/10.1134/s1063782610100258
https://doi.org/10.1134/s1063782610100258
Publikováno v:
Semiconductors. 43:599-601
Silicon films with a low defect concentration have been formed on a sapphire substrate using the process of solid-phase recrystallization. The method of X-ray rocking curves has been used in order to assess the crystalline quality of the silicon-on-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5c8ad787ce803ca37b8b2bb27e160bb
https://doi.org/10.1134/s1063782609050108
https://doi.org/10.1134/s1063782609050108