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pro vyhledávání: '"Yu. Yu. Fyodorov"'
Autor:
O. Yu. Kudryashov, V. I. Ratushnyi, Alexander Y. Polyakov, A. I. Belogorokhov, M. P. Duhnovsky, Stephen J. Pearton, V. F. Pavlov, T. G. Yugova, S. S. Malakhov, A. K. Ratnikova, Yu. P. Kozlova, A. V. Govorkov, N. B. Smirnov, I. A. Belogorokhov, A. A. Donskov, M. V. Mezhennyi, Yu. Yu. Fyodorov, A. V. Markov, I. A. Leontyev
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:1011-1015
Growth of GaN on polycrystalline chemical vapor deposition (CVD) diamond prepared on Si was achieved by hydride vapor phase epitaxy (HVPE). If the polycrystalline CVD diamond is separated from the Si substrate and the side turned to Si is covered by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c592424a7f418b6ac1444e5eea2466c
https://doi.org/10.1116/1.3488616
https://doi.org/10.1116/1.3488616
