Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yu. V. Tanasyuk"'
Publikováno v:
Journal of Nano- and Electronic Physics. 11:05036-1
Autor:
M. D. Andriichuk, L. D. Paranchich, S. Yu. Paranchich, O. S. Romanyuk, Yu. V. Tanasyuk, V. N. Makogonenko, T. A. Mel’nichuk
Publikováno v:
Inorganic Materials. 43:466-470
The optical and transport properties of Fe2+-doped Cd x Hg1−x Se crystals with a midgap Fe2+ level have been studied. The results demonstrate that Fe2+ ions influence both the optical and transport properties of Cd x Hg1−x Se〈Fe2+〉. The obser
Autor:
L. D. Paranchich, M. D. Andriichuk, Yu. V. Tanasyuk, V. R. Romanyuk, S. Yu. Paranchich, V. N. Makogonenko, T. A. Mel’nichuk
Publikováno v:
Inorganic Materials. 43:338-343
We have studied the effect of doping with 3d transition metals (iron, cobalt, and chromium) on the thermoelectric properties of single crystals of Cd x Hg1−x Se solid solutions at temperatures from 77 to 400 K and the effect of thermal annealing in
Autor:
V. R. Romanyuk, T. A. Mel’nichuk, V. N. Makogonenko, M. D. Andriichuk, S. Yu. Paranchich, Yu. V. Tanasyuk, L. D. Paranchich
Publikováno v:
Journal of Applied Spectroscopy. 74:81-85
We present the results of experimental studies of the optical properties of cobalt-doped Cd x H1−x Se (x = 0.18) single crystals with cobalt ion concentrations of NCo = 5·1018, 5·1019, and 1·1020 cm−3 at T = 90 K and 300 K. The composition (x
Autor:
E. F. Sklyarchuk, L. A. Kosyachenko, S. Yu. Paranchich, V. V. Motushchuk, Yu. V. Tanasyuk, E. L. Maslyanchuk, Valery M. Sklyarchuk
Publikováno v:
Semiconductors. 37:452-455
Generation-recombination currents in surface-barrier structures based on vanadium-doped CdTe are investigated. The level depth and the capture cross section of the centers responsible for the most efficient generation-recombination processes in the s
Autor:
V. R. Romanyuk, M. D. Andriichuk, S. Yu. Paranchich, L. D. Paranchich, Yu. V. Tanasyuk, V. N. Makogonenko
Publikováno v:
Journal of Applied Spectroscopy. 70:427-431
The optical and photoelectric properties of CdTe:V crystals with the doping impurity concentration N V = 5·1018–5·1019 cm−3 are investigated and the possibility of their use as a photorefractive material is considered. As is seen from the spect
Autor:
O. S. Romanyuk, L. D. Paranchich, M. D. Andriichuk, V. I. Sichkovskii, R. N. Yurtsenyuk, V. N. Makogonenko, Yu. V. Tanasyuk, S. Yu. Paranchich
Publikováno v:
Inorganic Materials. 39:333-335
The effect of Bridgman growth conditions on the transport and optical properties of CdTe〈V〉 crystals with a vanadium concentration of 5 × 1025, 1025, and 5 × 1024 m–3 is studied.