Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Yu. V. Syrov"'
Publikováno v:
Тонкие химические технологии, Vol 12, Iss 6, Pp 83-90 (2017)
Synthesis and study of complex chalcogenides in the low oxidation state opens unexpected new opportunities of studying some fundamental problems of condensed matter physics. Dichalcogenides of transition metals, i.e., compounds with the general formu
Externí odkaz:
https://doaj.org/article/607cd507773c4b3a9c2a749674df4987
Autor:
A. S. Kovaleva, Olga S. Tarasova, A. I. Dontsov, Yu. V. Syrov, I. Ya. Mittova, B. V. Sladkopevtsev
Publikováno v:
Inorganic Materials. 57:663-668
Surface modification of GaAs in sulfur vapor by different procedures and subsequent annealing and thermal oxidation have an advantageous effect on the properties of heterostructures, ensuring binding of the constituent components of the substrate and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff256c3d45e2fd302ff6767be919d3bf
https://doi.org/10.1134/s002016852107013x
https://doi.org/10.1134/s002016852107013x
Autor:
Svetlana S. Kormilitsina, Yu. V. Syrov, E. V. Zharikova, R. Yu. Kozlov, S. N. Knyzev, D. A. Zavrazhin, Elena V. Molodtsova
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 24:48-56
The method of plane-transverse bending was used to measure the strength of thin single-crystal plates of undoped InSb with a crystallographic orientation of (100). It was found that the strength of the plates (thickness ≤ 800 μm) depends on their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4d3936abfe6c075c545376fa24cbb85
https://doi.org/10.17073/1609-3577-2021-1-48-56
https://doi.org/10.17073/1609-3577-2021-1-48-56
Publikováno v:
Doklady Chemistry. 495:178-181
It has been shown that the difference in the structure of electronic orbitals of silicon and germanium atoms is a decisive factor responsible for the formation of porous layers during their electrochemical etching in solutions of hydrofluoric acid.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7f5a799cfaf0025c8ff65d27fda326d
https://doi.org/10.1134/s001250082011004x
https://doi.org/10.1134/s001250082011004x
Autor:
V. I. Shvets, A. G. Yakovenko, E. N. Abramova, A. M. Khort, Yu. V. Syrov, E. A. Slipchenko, V. N. Tsigankov
Publikováno v:
Доклады Академии наук. 487:32-35
Peculiarities of porous silicon layers formation during electrochemical etching of p-type silicon were studied. Principal divisions of pore formation mechanisms in n-type and p-type of silicon were demonstrated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb01e4a74c32a901320443c8ef898b43
https://doi.org/10.31857/s0869-5652487132-35
https://doi.org/10.31857/s0869-5652487132-35
Autor:
E. N. Abramova, T. A. Sorokin, A. M. Khort, Yu. V. Syrov, V. I. Shvets, M. V. Tsygankova, A. G. Yakovenko
Publikováno v:
Doklady Chemistry. 481:166-169
The change in the photoluminescence peaks of porous silicon at λ = 640–670 and 540–560 nm at 300 and 77 K, as well as their behavior after low-temperature annealing of the samples at 500°С, has been studied. The change in these peaks correlate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6200da2856906ce0bd746d65a3d8c648
https://doi.org/10.1134/s0012500818080037
https://doi.org/10.1134/s0012500818080037
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:217-221
It is established that the crystallographic orientation of a single-crystal silicon substrate affects the nucleation, shape, and evolution of silicon pores during its electrochemical etching. The shape, spatial orientation, and initiation of silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::116c832b4604b3583e92f9342423ff86
https://doi.org/10.1134/s1027451018020027
https://doi.org/10.1134/s1027451018020027
Autor:
E. A. Slipchenko, E. N. Abramova, A. M. Khort, V. N. Tsygankov, Yu. V. Syrov, A. G. Yakovenko, V. I. Shvets
Publikováno v:
Doklady Chemistry. 487:165-167
Features of the formation of porous silicon layers during anodic etching of p-Si were considered. A fundamental difference between the mechanisms of the formation of nanostructured layers on p-and n-Si was shown.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1acb67ff4a987f38a24b10dca8a7ce77
https://doi.org/10.1134/s0012500819070012
https://doi.org/10.1134/s0012500819070012
Publikováno v:
Inorganic Materials. 52:979-984
Variations in the contours of pores produced in n-type silicon by electrochemical etching in hydrofluoric acid solutions are interpreted in terms of the mechanism underlying the chemical interaction of the etchant with silicon and the anisotropy of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85821382ad137c97f36945aa96f8fc26
https://doi.org/10.1134/s0020168516100010
https://doi.org/10.1134/s0020168516100010
Autor:
Yu. V. Syrov
Publikováno v:
Doklady Chemistry. 471:365-367
The chemical reaction of single-crystal indium antimonide with saturated elemental sulfur vapor is diffusion-limited and leads to the formation of the triple layer In2S3–(xIn2S3 + (1–x)Sb2S3)–Sb on the surface of the samples. A model explaining
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49e28cf03eb6a6f6a65e0685ba42ca94
https://doi.org/10.1134/s0012500816120077
https://doi.org/10.1134/s0012500816120077