Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yu. V. Kudashova"'
Autor:
Mikhail V. Maximov, A. E. Zhukov, Yu. M. Zadiranov, Andrey A. Lipovskii, V. M. Ustinov, Yu. V. Kudashova, D.A. Livshits, Eduard Moiseev, M. M. Kulagina, S. A. Blokhin, M. A. Bobrov, N. V. Kryzhanovskaya, S. I. Troshkov
Publikováno v:
Semiconductors. 50:390-393
Microdisk injection lasers on GaAs substrates, with a minimum diameter of 15 μm and an active region based on InAs/InGaAs quantum dots, are fabricated. The lasers operate in the continuous-wave mode at room temperature without external cooling. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6a196b34027e901569e3a88875b9eab
https://doi.org/10.1134/s1063782616030131
https://doi.org/10.1134/s1063782616030131
Autor:
Mikhail V. Maximov, T. V. L’vova, Mikhail V. Lebedev, Yu. V. Kudashova, M. M. Kulagina, A. E. Zhukov, M. A. Bobrov, Eduard Moiseev, N. V. Kryzhanovskaya, A. M. Nadtochiy, A. A. Blokhin, S. I. Troshkov, I. I. Shostak
Publikováno v:
Technical Physics Letters. 41:654-657
Sulfide passivation has been used to reduce the surface nonradiative recombination rate in micro- disk mesas based on (AlGaIn)As/GaAS heterostructures the active region of which is constituted either by ten GaAs/AlAs quantum wells or by a sheet of In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ffb2ea091a174a3c9d2cd8663c606c
https://doi.org/10.1134/s106378501507010x
https://doi.org/10.1134/s106378501507010x
Autor:
A. V. Savelyev, Eduard Moiseev, N. V. Kryzhanovskaya, A. E. Zhukov, Andrey A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. V. Kudashova, I. I. Shostak, Mikhail V. Maximov
Publikováno v:
Semiconductors. 49:674-678
The thermal resistance of AlGaAs/GaAs microlasers of the suspended-disk type with a diameter of 1.7–4 μm and InAs/InGaAs quantum dots in the active region is inversely proportional to the squared diameter of the microdisk. The proportionality fact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbc83bab5443bb6f772b0e874c124a2e
https://doi.org/10.1134/s1063782615050279
https://doi.org/10.1134/s1063782615050279
Autor:
M. M. Kulagina, S. I. Troshkov, N. V. Kryzhanovskaya, Yu. M. Zadiranov, F. I. Zubov, Eduard Moiseev, Yu. V. Kudashova, D.A. Livshits, Alexey E. Zhukov, Mikhail V. Maximov
Publikováno v:
SPIE Proceedings.
In this work, electrically-injected microdisk lasers with diameter varied from 15 to 31μm based on an InAs/InGaAs QD active region have been fabricated and tested in continuous wave regime. At room temperature, lasing is achieved at wavelength aroun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f8f025aefa5dbf149c2ff21c8ee887a
https://doi.org/10.1117/12.2208322
https://doi.org/10.1117/12.2208322
Autor:
N. V. Kryzhanovskaya, Yu. V. Kudashova, Andrey Bogdanov, Eduard Moiseev, Z. F. Sadrieva, M. M. Kulagina, Andrey A. Lipovskii, M. V. Maximov, Alexey E. Zhukov, Ivan Mukhin, Yu. M. Zadiranov
Publikováno v:
Optics letters. 40(17)
Optically pumped InAs quantum dot microdisk lasers with grooves etched on their surface by a focused ion beam is studied. It is shown that the radial grooves, depending on their length, suppress the lasing of specific radial modes of the microdisk. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fe88e64ce9e34bc5b2ba603b9761924
https://pubmed.ncbi.nlm.nih.gov/26368702
https://pubmed.ncbi.nlm.nih.gov/26368702
Autor:
N. V. Kryzhanovskaya, Yu. M. Zadiranov, S. I. Troshkov, Alexey E. Zhukov, Andrey A. Lipovskii, D.A. Livshits, Mikhail V. Maximov, F. I. Zubov, Yu. V. Kudashova, M. M. Kulagina, Eduard Moiseev
Publikováno v:
Electronics Letters. 51:1354-1355
A 31 µm in diameter microdisk laser with an InAs/InGaAs quantum dot active region has been tested in the continuous-wave regime at elevated temperatures. Lasing is achieved up to 100°C with a threshold current of 13.8 mA. The emission spectrum demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::647fa228dc8cc380580c2d077099b417
https://doi.org/10.1049/el.2015.2325
https://doi.org/10.1049/el.2015.2325
Autor:
H. Karjalainen, Andrey A. Lipovskii, Eduard Moiseev, V.-M. Korpijärvi, Yu. V. Kudashova, M. M. Kulagina, Alexey E. Zhukov, Tapio Niemi, N. V. Kryzhanovskaya, S. I. Troshkov, Mircea Guina, Mikhail V. Maximov
Publikováno v:
Journal of Physics: Conference Series. 643:012040
Microdisk lasers based on novel InGaAsNSb/GaAsN quantum well active region are developed and studied under optical pumping. Room temperature lasing at 1.55 μm in 2.3 μm in diameter microdisks with InGaAsNSb/GaAsN QW is demonstrated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50fa1ae09c999ea301bc1155f2e37cb6
https://doi.org/10.1088/1742-6596/643/1/012040
https://doi.org/10.1088/1742-6596/643/1/012040
Autor:
N. V. Kryzhanovskaya, M. M. Kulagina, S. I. Troshkov, Yu. V. Kudashova, Mikhail V. Maximov, Alexey E. Zhukov, Alexey M. Nadtochiy, I. I. Shostak, Mikhail V. Lebedev, Eduard Moiseev, T. V. Lvova
Publikováno v:
Journal of Physics: Conference Series. 643:012043
Sulphide passivation was used for reducing the surface recombination velocity of microdisk mesas based on (AlGaIn)As/GaAs heterostructures with active region formed either by ten GaAs/AlAs quantum wells or by 1 layer of InAs/In0.15Ga0.85As quantum do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21bbe20a3be6605b57c1ea4be56cb22a
https://doi.org/10.1088/1742-6596/643/1/012043
https://doi.org/10.1088/1742-6596/643/1/012043
Autor:
N V Kryzhanovskaya, M V Maximov, A M Nadtochiy, S A Blokhin, M A Bobrov, M M Kulagina, S I Troshkov, Yu M Zadiranov, A A Lipovskii, E I Moiseev, Yu V Kudashova, V M Ustinov, A E Zhukov
Publikováno v:
Journal of Physics: Conference Series; Oct2015, Vol. 643 Issue 1, p1-1, 1p
Autor:
E I Moiseev, N V Kryzhanovskaya, Yu V Kudashova, M V Maximov, M M Kulagina, S I Troshkov, A A Lipovskii, V-M Korpijärvi, H Karjalainen, T Niemi, M Guina, A E Zhukov
Publikováno v:
Journal of Physics: Conference Series; Oct2015, Vol. 643 Issue 1, p1-1, 1p