Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Yu. V. Kryuchenko"'
Autor:
D. V. Korbutyak, Yu. V. Kryuchenko
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 84:209-215
We study theoretically the excitonic emission properties of a hybrid nanosystem composed of a spherical metal nanoparticle (NP) and a spherical quantum dot (QD). We show that electromagnetic field (EMF) emitted by a single QD has only dipole, quadrup
Autor:
I. O. Sokolovskyi, Vitaliy Kostylyov, A. V. Sachenko, E. I. Terukov, A. S. Abramov, A. V. Bobyl, Yu. V. Kryuchenko, I. E. Panaiotti
Publikováno v:
Semiconductors. 50:257-260
An approach is proposed to calculate the optimal parameters of silicon-based heterojunction solar cells whose key feature is a low rate of recombination processes in comparison with direct-gap semiconductors. It is shown that at relatively low majori
Autor:
E. I. Terukov, Dmitrii Bogdanov, A. V. Bobyl, D. L. Orekhov, Vitaliy Kostylyov, Igor Sokolovskyi, I. E. Panaiotti, Yu. V. Kryuchenko, A. V. Sachenko
Publikováno v:
Technical Physics Letters. 41:482-485
The possibility of creating tandem heterojunction-with-intrinsic-thin-layer (HIT) solar cells possessing photovoltaic conversion efficiency greater than that of the best existing single-junction HIT structures is analyzed. It is established that, bec
Autor:
A. V. Bobyl, K. V. Emtsev, Igor Sokolovskyi, E. I. Terukov, A. V. Sachenko, V. N. Verbitskiy, S. A. Kudryashov, Yu. V. Kryuchenko, A. S. Abramov, Vitaliy Kostylyov
Publikováno v:
Semiconductors. 49:693-699
Based on the general relations obtained in our previous studies, the photovoltaic characteristics of a model a-Si:H/μc-Si:H tandem solar cell (SC) are calculated and analyzed. The experimental and theoretical current-voltage (I–V) characteristics
Autor:
Yu. V. Kryuchenko, Vitaliy Kostylyov, N.S. Tokmoldin, A. V. Bobyl, S. Zh. Tokmoldin, A.V. Smirnov, A. V. Sachenko, E. I. Terukov, Igor Sokolovskyi
Publikováno v:
Energy Policy. 68:116-122
We have calculated annual (i.e., for each day of the year) daytime dependences of the electric power output per unit area of an a-Si:H solar cell (SC) at latitudes 45°N, 50°N, 55°N, 60°N and at certain geographical points of Russia, Kazakhstan, U
Autor:
V. P. Kostylev, I. O. Sokolovskyi, Yu. V. Kryuchenko, E. I. Terukov, Yu. A. Nikolaev, A. V. Sachenko, V. N. Verbitskii, A. V. Bobyl
Publikováno v:
Technical Physics. 58:1625-1631
The time dependences of the key characteristic of a-Si:H solar cells over daylight hours are theoretically simulated. The model is used to calculate the time dependences for an arbitrary geographic latitude in the interval 30°–60° and arbitrary d
Autor:
Yu. A. Nikolaev, Yu. V. Kryuchenko, A. V. Sachenko, V. N. Verbitskii, I. O. Sokolovskyi, A. V. Bobyl, E. I. Terukov, V. P. Kostylev
Publikováno v:
Technical Physics. 58:1632-1637
The annual dependences of the powers and energies generated by the unit area of a solar cell (SC) are calculated for a-Si:H-based SCs operating at latitudes of 45°N, 50°N, 55°N, and 60°N and in some geographical localities of Russia. Normalizatio
Autor:
Yu. V. Kryuchenko
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 16:227-239
Autor:
Yu. V. Kryuchenko
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 15:91-116
Autor:
Yu. V. Kryuchenko, E. V. Begun, D. V. Korbutyak, I. I. Geru, A. V. Sachenko, E. G. Manoilov, Olga M. Sreseli, E. B. Kaganovich
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 6:420-426
Photoelectric Properties of Heterostructures with Oxide Films Containing Si(Ge) Quantum Dots Formed by Pulsed Laser Deposition A. V. Sachenko1, D. V. Korbutyak1, Yu. V. Kryuchenko1 ∗, E. B. Kaganovich1, E. G. Manoilov1, E. V. Begun1, O. M. Sreseli2