Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Yu. V. Khabarov"'
Publikováno v:
Semiconductors. 40:558-569
Photoluminescence of a structure based on GaAs with δ-doped n-type layers is studied experimentally at 77 K in the context of a previously suggested spectral-correlative method for investigating semiconductor structures with laterally nonuniform lay
Autor:
D. Yu. Prokhorov, Andrey A. Lomov, Yu. V. Khabarov, Imamov Rafik M, G. B. Galiev, A. G. Sutyrin, M. A. Chuev
Publikováno v:
Crystallography Reports. 50:739-750
The structural properties of multiplayer AlxGa1−xAs/GaAs/AlxGa1−xAs systems (x ≈ 0.2) grown on GaAs(001) substrates are studied by the methods of double-crystal X-ray diffractometry and reflectometry. The depth profiles of deformation, amorphiz
Publikováno v:
Semiconductors. 38:437-446
The previously suggested spectral-correlative method for studying nanostructures is applied to an analysis of photoluminescence of tunneling-coupled and isolated quantum wells in structures with laterally nonuniform layers. This method made it possib
Autor:
Yu. V. Khabarov
Publikováno v:
Semiconductors. 37:322-328
A new technique for the experimental investigation of semiconductor structures is suggested and implemented. The technique is based on an analysis of correlations in the spectra of samples with laterally nonuniform layers. A molecular-beam-epitaxy-gr
Autor:
Yu. V. Fedorov, V. G. Mokerov, Imamov Rafik M, Yu. V. Khabarov, A. M. Afanas'ev, M. A. Chuev, Andrey A. Lomov
Publikováno v:
Russian Microelectronics. 32:63-68
Strained-layer quantum wells of different thicknesses are realized in the form of an n-Al0.25Ga0.75As/InxGa1 – xAs/GaAs pseudomorphic heterostructure. The structural properties of the quantum wells are determined by high-resolution double-crystal X
Autor:
Yu. V. Fedorov, R. A. Lunin, A. de Visser, Yu. V. Khabarov, V. A. Rogozin, V. A. Kulbachinskii, V. G. Mokerov
Publikováno v:
Semiconductor Science and Technology, 17, 947-951. IOP Publishing Ltd.
We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 = 2.7 ML quantum dots are formed and the metallic type of conductivity changes to variable range hoppi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35c72365f03f9efc38814becfa07465a
https://dare.uva.nl/personal/pure/en/publications/optical-and-transport-properties-of-short-period-inasgaas-superlattices-near-quantum-dot-formation(949fa46f-06fb-455c-8a8b-40993799eca6).html
https://dare.uva.nl/personal/pure/en/publications/optical-and-transport-properties-of-short-period-inasgaas-superlattices-near-quantum-dot-formation(949fa46f-06fb-455c-8a8b-40993799eca6).html
Publikováno v:
Semiconductors. 35:409-414
Electrical and photoluminescence studies of MBE-grown Si delta-doped GaAs structures at a varied partial pressure ratio PAs/PGa =γ on substrates with (111)Ga orientation and misoriented toward the [2\(\bar 1\bar 1\)] direction have been performed. H
Publikováno v:
Doklady Physics. 46:88-91
Publikováno v:
Doklady Physics. 45:523-527
Autor:
V. G. Mokerov, A. V. Guk, Yu. V. Khabarov, Yu. V. Fedorov, L. E. Velikovskii, V. É. Kaminskii
Publikováno v:
Doklady Physics. 45:435-438