Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Yu. V. Dubrovskii"'
Publikováno v:
Low Temperature Physics. 30:930-936
The capabilities and limitations of wavelet analysis are demonstrated for the illustrative case of two practial applications: investigation of magneto-tunneling signals and the extended x-ray absorption fine structure (EXAFS) of uranium. A brief intr
Publikováno v:
Journal of Experimental and Theoretical Physics. 99:530-538
The paper is devoted to analysis of the electron transport through one-barrier GaAs/AlAs/GaAs heterostructures. The oscillating component of transport characteristics of symmetric one-barrier GaAs/AlAs/GaAs heterostructures with spacers, which is ass
Publikováno v:
Semiconductors. 38:419-430
The electron transport through single-barrier GaAs/AlAs/GaAs heterostructures is studied. This transport is caused by resonant tunneling between the two-dimensional states related to the Γ valley of the GaAs conduction band and various two-or zero-d
Publikováno v:
Semiconductors. 37:692-698
Electron tunnel transport across single-barrier GaAs/AlAs/GaAs heterostructures is investigated. It is shown that “zero bias anomalies”—extrema in differential conductivity close to the zero bias—in the structures investigated are caused by r
Autor:
A. V. Veretennikov, Yu. N. Khanin, Mohamed Henini, E. E. Vdovin, G. Hill, Yu. V. Dubrovskii, Andrew Levin, Laurence Eaves, P. C. Main, Amalia Patanè
Publikováno v:
Nanotechnology. 14:16-19
We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The images reveal clearly the elliptical symmetr
Autor:
G. Hill, J.S. Roberts, Sergey V. Morozov, Peter A. Houston, Ivan A. Larkin, V V Larkin, D. Yu. Ivanov, Yu. V. Dubrovskii, John H. Jefferson
Publikováno v:
Nanotechnology. 13:487-490
We present transconductance measurements on gated V-groove GaAs/AlGaAs quantum wire heterostructures grown by metal-organic chemical vapour deposition. The results show anomalously large negative magnetoresistance for a magnetic field perpendicular t
Autor:
D. Yu. Ivanov, P. C. Main, J. C. Portal, Mohamed Henini, Duncan K. Maude, G. Hill, Laurence Eaves, E. E. Vdovin, V. A. Volkov, Yu. V. Dubrovskii, V. G. Popov, Richard Hill
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 12:300-303
We have investigated equilibrium tunnelling between disordered two-dimensional electron systems at temperatures below 0:3 K over a wide range of magneticeld, B, applied perpendicular to the electron layers. In zeroeld, we observe a narrow conductance
Autor:
Andrew Levin, V. V. Sirotkin, Mohamed Henini, P. N. Brounkov, Yu. N. Khanin, P. C. Main, G. Hill, Amalia Patanè, Laurence Eaves, Ivan A. Larkin, D. K. Maude, D. Yu. Ivanov, E. E. Vdovin, J. C. Portal, Yu. V. Dubrovskii
Publikováno v:
Nanotechnology. 12:491-495
We investigate resonant tunnelling in GaAs/(AlGa)As double-barrier resonant-tunnelling diodes in which a single layer of InAs self-assembled quantum dots is embedded in the centre of the GaAs quantum well. The dots provide a well-defined and controll
Autor:
P. C. Main, G. Hill, Mohamed Henini, Yu. V. Dubrovskii, Amalia Patanè, M. L. Zambrano, E. E. Vdovin, Andrew Levin, Laurence Eaves
Publikováno v:
Scopus-Elsevier
Autor:
E. E. Vdovin, Mohamed Henini, A. V. Veretennikov, Andrew Levin, Laurence Eaves, P. C. Main, Yu. V. Dubrovskii, Yu. N. Khanin, Amalia Patanè, G. Hill
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 74:41-45
We present an experimental study of electron wave functions in InAs/GaAs self-assembled quantum dots by magnetotunneling spectroscopy. The electronic wave functions have a biaxial symmetry in the growth plane, with axes corresponding to the main crys