Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Yu. V. Balakshin"'
Autor:
Yu. V. Balakshin, D. K. Minnebaev, E. A. Vorobyeva, A. P. Evseev, A. V. Nazarov, A. A. Shemukhin, B. S. Chernysh
Publikováno v:
Moscow University Physics Bulletin. 77:498-503
Autor:
Emad M. Elsehly, A. P. Evseev, E. A. Vorobyeva, Yu. V. Balakshin, N. G. Chechenin, A. A. Shemukhin
Publikováno v:
Technical Physics Letters. 48:58-61
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 15:S60-S65
Autor:
Yu. V. Balakshin, E. A. Vorobyeva, A. V. Stepanov, A. P. Evseev, Andrey A. Shemukhin, K. D. Kushkina, A. A. Tatarintsev
Publikováno v:
Moscow University Physics Bulletin. 76:84-88
Multiwall carbon nanotubes (MWCNTs) with different initial diameters have been irradiated with accelerated He $${}^{+}$$ ions in the fluence range from $$2.5\times 10^{15}$$ to $$3\times 10^{16}$$ ion/cm $${}^{2}$$ . Raman scattering showed that the
Autor:
Yu. V. Balakshin, A. P. Evseev, Andrey A. Shemukhin, A.V. Nazarov, V. S. Chernysh, Yu. M. Spivak, E. N. Muratova, A. V. Kozhemiako
Publikováno v:
Moscow University Physics Bulletin. 75:465-468
In this paper, the irradiation of porous silicon with Ar $${}^{+}$$ ions with the energies of 100 and 200 keV and fluences from $$10^{12}$$ cm $${}^{-2}$$ up to $$3\times 10^{13}$$ cm $${}^{-2}$$ has been performed and studied. The effect of ion irra
Autor:
Daria I. Tishkevich, Maksim Kutuzau, A.V. Nazarov, A. E. Ieshkin, Yu. V. Balakshin, A. P. Evseev, E.Yu. Kaniukov, V. V. Prigodich, D. V. Yakimchuk, V. D. Bundyukova, Andrey A. Shemukhin, A. V. Kozhemiako
Publikováno v:
Moscow University Physics Bulletin
This article presents the results of gold deposition into pores of SiO $${}_{2}$$ /Si matrices and the modifications of the obtained SiO $${}_{2}$$ (Au)/Si systems by irradiation with argon Ar $${}^{+}$$ ions with an energy of 100 keV with a fluence
Publikováno v:
Moscow University Physics Bulletin. 75:218-224
Single-crystal silicon has been irradiated with xenon ions at energies of 100 and 200 keV and argon ions at 110 keV. The irradiation fluence varied in the range of the displacement per atom (dpa) from 0.1 to 1 for both types of ions and selected ener
Autor:
A. V. Kozhemiako, D. K. Minnebaev, A.V. Nazarov, V. S. Chernysh, Alexander M. Smirnov, Andrey A. Shemukhin, A. P. Evseev, Yu. V. Balakshin, E. A. Vorobyeva
Publikováno v:
Moscow University Physics Bulletin. 75:133-136
Silicon carbide was irradiated with aluminum ions at an energy of 190 keV with fluences of $$2\times 10^{13}{-}5\times 10^{14}$$ ion/cm $${}^{2}$$ . The temperature of the target during irradiation was 300–500 $${}^{\circ}$$ C or it was kept at roo
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 460:230-233
Thermal mechanism of ion irradiated multiwall carbon nanotube amorphization was verified by molecular dynamic simulation. The results comparable to experiment were obtained in the MD simulation. The simulation results show that one of the possible me
Publikováno v:
Semiconductors. 53:1683-1687
The results of investigating the wettability of commercial multi-walled carbon nanotubes (MWCNTs) Taunit-MD under irradiation with 120-keV Ar+ ions with various fluences are presented. The structure of the irradiated MWCNTs is investigated using Rama