Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Yu. S. Polubavkina"'
Publikováno v:
Semiconductors. 52:248-253
A semiconductor-laser design is proposed in which parasitic recombination in the waveguide region is suppressed by means of double asymmetric barriers adjacent to the active region. Double asymmetric barriers block the undesirable transport of one ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4e64e7e364ee1e9d12ec1e20f3dc0df
https://doi.org/10.1134/s1063782618020240
https://doi.org/10.1134/s1063782618020240
Autor:
N. V. Kryzhanovskaya, Mikhail V. Maximov, Yu. S. Polubavkina, F. I. Zubov, Elizaveta Semenova, Kresten Yvind, Levon V. Asryan, A. E. Zhukov, Eduard Moiseev
Publikováno v:
Semiconductors. 51:254-259
The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91a79835446a05165fe9925c0f23a2e0
https://doi.org/10.1134/s1063782617020142
https://doi.org/10.1134/s1063782617020142
Autor:
Ekaterina V. Nikitina, A. E. Zhukov, Eduard Moiseev, V. N. Nevedomskiy, N. V. Kryzhanovskaya, Mikhail V. Maximov, Yu. S. Polubavkina, A. Yu. Egorov, A. A. Lazarenko
Publikováno v:
Semiconductors. 51:267-271
The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface plan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::020320621681ef9a7e183ab0d6c4609b
https://doi.org/10.1134/s1063782617020087
https://doi.org/10.1134/s1063782617020087
Autor:
S. I. Troshkov, Yu. M. Zadiranov, M. M. Kulagina, O. I. Simchuk, A. E. Zhukov, Andrey A. Lipovskii, N. V. Kryzhanovskaya, Eduard Moiseev, Yu. S. Polubavkina, F. I. Zubov, Mikhail V. Maximov
Publikováno v:
Semiconductors. 50:1408-1411
The spectral, threshold, and power characteristics of a microdisk laser 31 μm in diameter with an active region based on InAs/InGaAs quantum dots, operating in the continuous-wave (cw) mode at room temperature are studied. The minimum threshold curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f425b424736dc1f9542775533976f133
https://doi.org/10.1134/s1063782616100250
https://doi.org/10.1134/s1063782616100250
Autor:
A. A. Sushkov, D. V. Yurasov, Mikhail V. Maximov, M. M. Kulagina, Andrey A. Lipovskii, Yu. M. Zadiranov, Alexander A. Dubinov, N. V. Kryzhanovskaya, Yu. S. Polubavkina, Eduard Moiseev, D. A. Pavlov, A. V. Novikov, A. V. Rykov, Z. F. Krasilnik, Alexey E. Zhukov, S. I. Troshkov, N. V. Baidus
Publikováno v:
Optics express. 25(14)
In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79e24346e8beb019646926c81121a2a2
https://pubmed.ncbi.nlm.nih.gov/28789176
https://pubmed.ncbi.nlm.nih.gov/28789176
Autor:
M. M. Kulagina, Alex Krasnok, Mikhail V. Maximov, Eduard Moiseev, Alexey M. Mozharov, Andrei V. Lavrinenko, Yu. S. Polubavkina, Alexey E. Zhukov, Andrey Bogdanov, Filipp E. Komissarenko, Andrey A. Lipovskii, N. V. Kryzhanovskaya, Z. F. Sadrieva, Ivan Mukhin, Yu. M. Zadiranov
Publikováno v:
2017 Progress In Electromagnetics Research Symposium - Spring (PIERS).
We analyze the optical forces acting on a nanoparticle placed in the vicinity of a plasmonic interface. We show that the under oblique plane wave excitation the nanoparticle excites surface plasmon polariton propagating along the plasmonic interface.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b15018e76739686af31fa117db26576f
https://doi.org/10.1109/piers.2017.8262429
https://doi.org/10.1109/piers.2017.8262429
Autor:
S. I. Troshkov, Alexey E. Zhukov, Andrey A. Lipovskii, N. V. Kryzhanovskaya, Riku Isoaho, M. M. Kulagina, Eduard Moiseev, V.-M. Korpijärvi, Mircea Guina, Mikhail V. Lebedev, Yu. S. Polubavkina, Tapio Niemi, T. V. Lvova, F. I. Zubov, Mikhail V. Maximov
We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eaf2e7d3f04accb1775b808d27bd1a98
https://trepo.tuni.fi/handle/10024/126074
https://trepo.tuni.fi/handle/10024/126074
Autor:
N. V. Kryzhanovskaya, Mikhail V. Maximov, Tapio Niemi, Yu. S. Polubavkina, Eduard Moiseev, Andrey A. Lipovskii, Alexey E. Zhukov, Mircea Guina, S I Troshkov, Ivan Mukhin, Yu. M. Zadiranov, M. M. Kulagina
We demonstrate that quantum dot microdisk lasers are able to operate under continuous wave current injection at 100 °C. We also present a novel method for increasing a side mode suppression ratio in microdisk lasers. publishedVersion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c42d465e2115aafb6cf33a16019d6af3
https://trepo.tuni.fi/handle/10024/125984
https://trepo.tuni.fi/handle/10024/125984
Autor:
M. M. Kulagina, Alex Krasnok, Yu. S. Polubavkina, N. V. Kryzhanovskaya, Andrey A. Lipovskii, V. V. Zhurikhina, Ivan Mukhin, Alexey E. Zhukov, M. V. Maximov, Yury M. Zadiranov, S A Scherbak, Andrey Bogdanov, Filipp E. Komissarenko, Eduard Moiseev
Publikováno v:
Journal of Applied Physics. 124:163102
High-index dielectric (Si) nanoantennas providing outcoupling of light from InAs/Ga(Al)As quantum dot (QD) microdisk lasers have been designed. The spatial distribution of light emitted from optically pumped QD microdisk lasers with a single Si spher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35fd63268a38f5106c1ab8e54203a5de
https://doi.org/10.1063/1.5046823
https://doi.org/10.1063/1.5046823
Autor:
Mikhail V. Maximov, S A Scherbak, N. V. Kryzhanovskaya, M. M. Kulagina, Alexey M. Nadtochiy, A. E. Zhukov, A. A. Lipovsky, Alexander Mintairov, Yu. S. Polubavkina
Publikováno v:
Journal of Physics: Conference Series. 917:052036
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af8c317455d0616c4332bdf545658edd
https://doi.org/10.1088/1742-6596/917/5/052036
https://doi.org/10.1088/1742-6596/917/5/052036