Výsledky vyhledávání - "Yu. S. Lelikov"

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n +-GaN substrates

Autor: R. I. Gorbunov, Yu. T. Rebane, V. Yu. Davydov, M. V. Virko, Vladislav Voronenkov, D. V. Tarhin, N. I. Bochkareva, Andrey Leonidov, Andrey Zubrilov, P. E. Latyshev, Alexander N. Smirnov, Yu. G. Shreter, V. S. Kogotkov, Yu. S. Lelikov

Publikováno v: Semiconductors. 50:699-704

The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped n+-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::336a2d34633c31010ae9a30923ab102d
https://doi.org/10.1134/s1063782616050250

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Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes

Autor: Yu. G. Shreter, Yu. T. Rebane, Vladislav Voronenkov, R. I. Gorbunov, A. I. Tsyuk, N. I. Bochkareva, Philippe Latyshev, Yu. S. Lelikov

Publikováno v: Semiconductors. 47:127-134

The results of studying the influence of the finite tunneling transparency of injection barriers in light-emitting diodes with InGaN/GaN quantum wells on the dependences of the current, capacitance, and quantum efficiency on the p-n junction voltage

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e6c3062d5860c33f309b16c0021143d0
https://doi.org/10.1134/s1063782613010089

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Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

Autor: R. I. Gorbunov, Yu. T. Rebane, Andrey Zubrilov, A. I. Tsyuk, Yu. G. Shreter, Vladislav Voronenkov, N. I. Bochkareva, Philippe Latyshev, Yu. S. Lelikov

Publikováno v: Semiconductors. 46:1032-1039

The mechanism of the internal quantum efficiency droop in InGaN/GaN structures with multiple quantum wells at current densities of up to 40 A cm−2 in high-power light-emitting diodes is analyzed. It is shown that there exists a correlation between

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f14c265687b52b1776cb50046c559ab7
https://doi.org/10.1134/s1063782612080039

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Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In0.2Ga0.8N/GaN quantum wells

Autor: Yu. T. Rebane, N. I. Bochkareva, Yu. G. Shreter, Yu. S. Lelikov, D. V. Tarkin, R. I. Gorbunov, I. A. Martynov

Publikováno v: Semiconductors. 42:1342-1345

A procedure for measuring the absorption coefficient for light propagating parallel to the surface of a GaN-based light emitting diode chip on a sapphire substrate is suggested. The procedure implies the study of emission from one end face of the chi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::20e326ca4ac14dac76182dcc4b64d2f8
https://doi.org/10.1134/s1063782608110195

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Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities

Autor: I. A. Martynov, A. S. Belov, R. I. Gorbunov, Yu. G. Shreter, N. I. Bochkareva, Yu. T. Rebane, Yu. S. Lelikov, A. V. Klochkov

Publikováno v: Semiconductors. 42:1355-1361

The current-voltage and brightness-voltage characteristics and the electroluminescence spectra of blue InGaN/GaN-based light-emitting diodes are studied to clarify the cause of the decrease in the emission efficiency at high current densities and hig

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a435f71f5735068975c95cd15c9e695
https://doi.org/10.1134/s1063782608110225

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Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures

Autor: Yu. T. Rebane, D. V. Tarkhin, I. A. Martynov, N. I. Bochkareva, Yu. S. Lelikov, R. I. Gorbunov, Yu. G. Shreter

Publikováno v: Semiconductors. 41:87-93

The spectra of electroluminescence, photoluminescence, and photocurrent for the In0.2Ga0.8N/GaN quantum-well structures are studied to clarify the causes for the reduction in quantum efficiency with increasing forward current. It is established that

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6777503d4854d91880178b7256088203
https://doi.org/10.1134/s1063782607010174

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A Classification of the Dislocation-Related Photoluminescencence in Silicon

Autor: Yu. T. Rebane, Yu. G. Shreter, D. V. Tarhin, A. A. Sitnikova, Yu. S. Lelikov, S. S. Ruvimov

Publikováno v: physica status solidi (b). 172:53-63

The photoluminescence (PL) spectra of the basic extended defects in Si are obtained. A new classification of the PL lines is proposed according to the squared edge components of the Burger's vectors of the dislocations which surround the structural d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f46a42770df573b1a88b66ee666ecfb7
https://doi.org/10.1002/pssb.2221720107

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