Zobrazeno 1 - 10
of 243
pro vyhledávání: '"Yu. P. Yakovlev"'
Publikováno v:
Vestnik Permskogo Universiteta: Seriâ Geologiâ, Vol 22, Iss 2, Pp 178-186 (2023)
Рассмотрены физико-химические свойства нефтей месторождений Пермского свода. На основе 838 проб нефтей семи палеозойских газонефтяных к
Externí odkaz:
https://doaj.org/article/afbce1fa1e2d46a4b9f51e8e3ecff706
Publikováno v:
Vestnik Permskogo Universiteta: Seriâ Geologiâ, Vol 18, Iss 3, Pp 286-291 (2019)
In result of comprehensive study, the areas of development and nature of oil and bitumen accumulation in Solikamsk and Sheshminskiy sediments at the North-Eastern regions of the Volga-Ural oil and gas province (the territory of Perm Krai, Udmurt Repu
Externí odkaz:
https://doaj.org/article/fe5579913d0644bda7fe34332131f672
Publikováno v:
Journal of Applied Spectroscopy. 89:918-922
Publikováno v:
Optics and Spectroscopy. 129:1306-1310
Autor:
E. V. Kunitsyna, A. A. Pivovarova, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, N. D. Il’inskaya, Yu. P. Yakovlev
Publikováno v:
Semiconductors. 55:601-607
Autor:
Yu. P. Yakovlev, L. V. Danilov, Maya P. Mikhailova, E. V. Ivanov, P.S. Kop'ev, K. V. Kalinina
Publikováno v:
Semiconductors. 54:1527-1547
The processes of radiative recombination and impact ionization in light-emitting structures based on bulk semiconductors, heterostructures with high potential barriers, nanostructures with deep quantum wells, and nanocrystals with quantum dots are re
Autor:
M. A. Royz, R. Yu. Mikulich, Yu. P. Yakovlev, Ya. V. Lebiadok, M. Ahmetoglu, E. A. Grebenshchikova, E.V. Kunitsyna, I. A. Andreev, N. D. Iliinskaya, A. A. Pivovarova
Publikováno v:
Semiconductors. 54:796-802
Photodiodes based on solid solutions in the GaSb–InAs system are for the first time applied to study the spectral characteristics of single and coupled whispering-gallery-mode (WGM) lasers emitting in a range of 2.2–2.3 μm. The capacity of photo
Publikováno v:
Semiconductors. 54:658-661
The impedance and capacitive properties of Pd/oxide/InP structures are investigated at 300 K in the frequency range of 10–1–10–5 Hz in air and in a nitrogen–hydrogen gas medium. The characteristics of structures in both media are interpreted
Publikováno v:
Semiconductors. 54:253-257
The design and technology for the fabrication of an asymmetric stepped InAs/InAs1 –ySby/InAsSbP heterostructure with an ultimate InSb content (up to y = 0.17) in the narrow-gap active region by vapor-phase epitaxy from metal-organic compounds are d
Publikováno v:
Semiconductors. 54:1820-1822
We report on the unusually large blue shift of electroluminescence spectrum with increase of the drive current at 77 K in a double-barrier nanoheterostructure with a deep AlSb/InAs0.83Sb0.17/AlSb quantum well grown by MOVPE on n-GaSb:Te substrate. Th