Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Yu. O. Kostin"'
Growth of an InP/GaInAsP Heterostructure on a Shaped InP Substrate for Laser Diode-Based CO2 Sensing
Publikováno v:
Inorganic Materials. 58:785-791
Autor:
A. A. Shelyakin, A A Padalitsa, V. N. Svetogorov, Yu. L. Ryaboshtan, D. R. Sabitov, M. G. Vasil’ev, Yu O Kostin, Maxim A. Ladugin, A. M. Vasil’ev, A. A. Marmalyuk
Publikováno v:
Quantum Electronics. 50:830-833
Superluminescent diodes based on AlGaInAs/InP separate-confinement double heterostructures with strain-compensated quantum wells are investigated. The influence of elastic strains in the active region on the output characteristics of the devices is a
Publikováno v:
Inorganic Materials: Applied Research. 11:1071-1077
Comprehensive physical and technological studies on the creation of mesastripe structures with a channel in the substrate and subsequent burying of the structure with a layer of zinc selenide are carry out. Planarity of heterointerfaces between the s
Publikováno v:
Inorganic Materials: Applied Research. 9:813-816
Buried light edge-emitting diodes (LEDs) with a wide emission spectrum in the wavelength range of 1380–1420 nm were developed. The design of an edge LED with a channel in a substrate and with the crescent active region and blocking layers of InP/Ga
Publikováno v:
Inorganic Materials. 53:1170-1173
A process has been developed for the liquid phase epitaxy of mesa stripe buried crescent InP/InGaAsP/InP heterostructures with a p–n–p–n/ZnSe leakage current-blocking structure. The salient feature of the process is a discontinuous mesa stripe
Autor:
Yu O Kostin, M V Shramenko, A A Lobintsov, A. A. Marmalyuk, A Yu Chamorovsky, Maxim A. Ladugin, S D Yakubovich
Publikováno v:
Quantum Electronics. 45:697-700
We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from
Autor:
E V Andreeva, Yu O Kostin, S N Il'ichenko, Maxim A. Ladugin, P. I. Lapin, A. A. Marmalyuk, S D Yakubovich
Publikováno v:
Quantum Electronics. 43:751-756
Quantum-well superluminescent diodes (SLD) with extremely thin active (AlGa)As and (InGa)As layers and centre wavelengths about 810, 840, 860 and 880 nm are experimentally studied. Their emission spectrum possesses the shape close to Gaussian, its FW
Publikováno v:
Quantum Electronics. 41:595-601
A method of service life tests of SLD-37 quantum-well superluminescent diodes (SLDs), which are widely used in optical coherence tomography, is described and the results of tests are presented. Special attention is given to variations in the emission
Publikováno v:
2014 International Conference Laser Optics.
Highly efficient and reliable single-mode superluminescent diodes (SLDs) with median wavelengths of 795, 840, 960 and 1060 nm and free-space output optical power (PFS) of up to 100 mW are developed. Main parameters of lightemitting modules based on t
Autor:
E V Andreeva, Yu O Kostin, D R Sabitov, N A Volkov, A. A. Marmalyuk, S D Yakubovich, P. I. Lapin
Publikováno v:
Quantum Electronics. 38:744-746
Superluminescent diodes (SLDs) based on double quantum-well (AlGa)As/GaAs heterostructures emitting between 800 and 900 nm are studied experimentally. These SLDs provide a high enough output power in the emission bandwidth more than 55 nm at much sho