Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Yu. N. Yankovsky"'
Autor:
V. S. Prosolovich, V. B. Odzhayev, A. K. Panfilenko, Yu. N. Yankovsky, V. V. Buslyuk, V. A. Filipyenya, A. N. Petlitsky
Publikováno v:
Russian Microelectronics. 49:295-301
The physical parameters of the silicon noise-generator diodes manufactured on single-crystalline silicon substrates by planar technology are studied by the method of the measurement of the current–voltage characteristics (I–V curves) and capacity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dd5f334687de6f0f839501e38ab3281
https://doi.org/10.1134/s1063739720040034
https://doi.org/10.1134/s1063739720040034
Autor:
A. N. Pyatlitski, Yu. N. Yankovsky, V. Yu. Yavid, V. S. Prosolovich, S. V. Shvedau, A. K. Panfilenko, Vladimir Odzhaev, V. A. Filipenya
Publikováno v:
Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series. 63:244-249
Contamination of the monocrystal silicon with technological impurities in the devices fabrication process exerts a considerable influence on the electro-physical characteristics of the bipolar n–p–n-transistors. Revelation of the causes of the la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f13a3db31f22421d78f9b38c9e1567e
https://doi.org/10.29235/1561-8358-2018-63-2-244-249
https://doi.org/10.29235/1561-8358-2018-63-2-244-249