Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yu. N. Vlasov"'
Autor:
Yu. N. Vlasov, V. Yu. Tuneekov, S. I. Niftaliev, I. V. Kuznetsova, L. V. Lygina, C. S. Gadzhiyeva
Publikováno v:
Journal of Sol-Gel Science and Technology. 96:489-497
Stable sols were obtained in the CeO2–Gd2O3 system using the stabilizing additive Hamulsion RUGLAP. The formation of phases in the CeO2–Gd2O3 system with Gd2O3 content of up to 0.07 mol occurs already at the stage of synthesis by the Krekke metho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f66138e15c2657e03b13bdaf6262095e
https://doi.org/10.1007/s10971-020-05387-9
https://doi.org/10.1007/s10971-020-05387-9
Publikováno v:
All the Materials. Encyclopedic Reference Book. :34-40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9b4c348dedd80fd63cefd39e30fdb3f
https://doi.org/10.31044/1994-6260-2019-0-10
https://doi.org/10.31044/1994-6260-2019-0-10
Autor:
G. I. Kotov, V. N. Trushin, A. V. Zdoroveyshchev, P. B. Demina, A. V. Budanov, B. N. Zvonkov, Yu. N. Vlasov, M. V. Dorokhin
Publikováno v:
Technical Physics Letters. 45:235-238
Spin light-emitting diodes based on InGaAs/GaAs heterostructures with a CoPt ferromagnetic injector were fabricated. It was demonstrated that the processing of these structures in selenium vapor prior to the deposition of a CoPt contact provides an o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::711d095c55876b40e4098e143ec3aebd
https://doi.org/10.1134/s1063785019030064
https://doi.org/10.1134/s1063785019030064
Publikováno v:
Vestnik Voronežskogo Gosudarstvennogo Universiteta Inženernyh Tehnologij, Vol 80, Iss 1, Pp 25-29 (2018)
It was shown that the effective transfer of the target component from the raw material occurs under a turbulent regime conditions provided by applying mechanical oscillations to a two-phase system: solid-liquid. Due to this hydrodynamic situation, no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ddd3176ea236da40b8ff038f85d272d
https://www.vestnik-vsuet.ru/vguit/article/view/1657
https://www.vestnik-vsuet.ru/vguit/article/view/1657
Publikováno v:
Journal of Physics: Conference Series. 1347:012105
A method for forming thin films of the Cu2SnS3 compound homogeneous in phase composition for use in solar cell devices is proposed. The Cu-Sn alloy layers deposited by thermal spraying in vacuum were annealed in sulfur vapor in a graphite chamber of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0778e4577eb2d63209efa63a3019b54d
https://doi.org/10.1088/1742-6596/1347/1/012105
https://doi.org/10.1088/1742-6596/1347/1/012105
Autor:
I. N. Arsent’ev, G. A. Panin, Yu. N. Vlasov, S. V. Kuzubov, N. N. Bezryadin, A. V. Kortunov, G. I. Kotov
Publikováno v:
Technical Physics Letters. 40:104-107
Results of examination of structural phase transitions on the GaP(111) surface after heat treatment in selenium vapors in a vacuum chamber with a quasi-closed volume are described. The electrophysical characteristics of Schottky-barrier diodes on GaP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f11b2cfbd90c229c87b79f4c4e81e5e2
https://doi.org/10.1134/s1063785014020035
https://doi.org/10.1134/s1063785014020035
Publikováno v:
Semiconductors. 46:736-740
Deep level transient spectroscopy has been used to study the effect of substrate pretreatment on the spectrum of electron states in Au/n-GaAs(100) Schottky diodes. Two bands of energy-distributed states have been found near the metal/semiconductor in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fa09b74dabfd59e87e60a17a94d73b5
https://doi.org/10.1134/s1063782612060073
https://doi.org/10.1134/s1063782612060073
Publikováno v:
Instruments and Experimental Techniques. 53:430-433
A technique for recording and processing the results of measuring the isothermal relaxation of the capacitance that allows determination of the parameters of the charge-localization centers in semiconductor heterostructures is described. The experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ee123fab220f64d0e6569e5285d09c4
https://doi.org/10.1134/s0020441210030188
https://doi.org/10.1134/s0020441210030188
Autor:
A. A. Starodubtsev, N. N. Bezryadin, P. K. Bhatnagar, Yu. N. Vlasov, G. I. Kotov, P. C. Mathur
Publikováno v:
Russian Physics Journal. 52:411-416
Influence of GaAs surface treatment in selenium vapors on the parameters of electronic states in the subsurface GaAs regions is investigated by the methods of volt-ampere and volt-farad characteristics and isothermal capacitance relaxation at tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4619eedcebf0661f07f122ca51a8f608
https://doi.org/10.1007/s11182-009-9238-z
https://doi.org/10.1007/s11182-009-9238-z
Publikováno v:
Journal of Analytical Chemistry. 57:606-611
The optimal parameters and the main analytical characteristics (limit of detection, sensitivity, dynamic range, rapidity, selectivity) of an ion mobility spectrometer have been determined in detecting lewisite vapors in air.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ca1fff92b8a38f85f0ad9ccb51ba3c2
https://doi.org/10.1023/a:1016278001307
https://doi.org/10.1023/a:1016278001307