Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yu. N. Gudenko"'
Autor:
K. Y. Wang, V. N. Tulupenko, N. N. Cheng, Z. P. Yang, V. Mashanov, Yu. N. Gudenko, V. N. Poroshin, V. V. Vainberg
Publikováno v:
Low Temperature Physics. 33:869-871
It is shown experimentally that when an acceptor impurity is shifted from the center to the edge of the quantum wells in Si∕Si1−xGex heterostructures, the binding energy of the ground state of the impurity decreases and the radius of localization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e3e2e0f2c20152c9cae69ff2c935293
https://doi.org/10.1063/1.2746865
https://doi.org/10.1063/1.2746865
Autor:
V. V. Vainberg, Yu. N. Gudenko, V. N. Poroshin, O. G. Sarbey, S. V. Chirchik, V. M. Vasetskii
Publikováno v:
Journal of Applied Physics. 112:083715
In the p-Si0.88Ge0.12/Si heterostructures with quantum wells delta-doped by boron, the decay kinetics of the lateral infrared photoconduction has been studied at low temperatures (15 to 50 K). Photoconduction was excited in the impurity spectral rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c26dc6063207046e0f03fbfa7898350f
https://doi.org/10.1063/1.4759283
https://doi.org/10.1063/1.4759283
Publikováno v:
Scopus-Elsevier
The electrical conductivity of carbon nanocomposite TVO-series resistors used as temperature sensors are studied in a wide temperature range of 300–1.8 K. It is found that hopping conductivity emerges at temperatures below 77 K. The shape of its te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fa089eb7ffeb7a358a7ee9f00aab5a0
http://www.scopus.com/inward/record.url?eid=2-s2.0-85072543541&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-85072543541&partnerID=MN8TOARS
