Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Yu. N. Golobokov"'
Publikováno v:
Известия Томского политехнического университета: Инжиниринг георесурсов, Vol 323, Iss 5 (2019)
The paper describes the software implementation of remote participation at Tokamak device experiment, particularly hardware remote control and monitoring implementation. This is an alternative to the traditional implementations based on such software
Externí odkaz:
https://doaj.org/article/0f6220e540394b6d8e3207da28cde1b8
Publikováno v:
Fusion Engineering and Design. 143:115-120
The multi-objective method evaluating the performance of the information visualization system of tokamak-type experimental device is presented. The method takes into account special features of the tokamak operation. The indicator includes not only e
Autor:
M. M. Sokolov, S. V. Merkulov, V.M. Pavlov, A. M. Lee, K. I. Baystrukov, V. L. Kim, Yu. N. Golobokov, A. G. Kachkin, A. A. Mezentsev, A. V. Nikolaev, S. A. Ilinych
Publikováno v:
Instruments and Experimental Techniques. 59:337-343
Results of designing of the hardware complex intended to control pulsed power systems of the T-15U tokamak are considered. The complex is based on digital and microprocessor components and ensures control over the power circuit of high-power semicond
Autor:
L. A. Lobes, S. V. Merkulov, A. V. Nikolaev, Andrey N. Malchukov, K. I. Baystrukov, M. M. Sokolov, A. A. Mezentsev, S. A. Ilinych, A. G. Kachkin, A. V. Ovchinnikov, Yu. N. Golobokov, V.M. Pavlov, A. M. Lee
Publikováno v:
Instruments and Experimental Techniques. 59:216-221
The results of designing an automated control system (ACS) of the Victoria pulse modulator complex, which is used for the high-voltage power supply of auxiliary plasma heating systems on the Т-10 and Т-15 tokamaks and gyrotron test benches, are con
Publikováno v:
Physica Status Solidi (a). 28:355-364
Dislocation processes occurring during plastic deformation of Si and Ge for θ = 0.50 to 0.95 (θ = T/Tm is the relative temperature) have been studied both by etch pit method and TEM. A similarity of dislocation processes in Si and Ge when compared