Zobrazeno 1 - 10
of 232
pro vyhledávání: '"Yu. N. Drozdov"'
Autor:
S. A. Kraev, Pavel A. Yunin, A. I. Okhapkin, E. A. Arkhipova, Yu. N. Drozdov, S. A. Korolev, M. N. Drozdov, D.B. Radishev, V. I. Shashkin
Publikováno v:
Semiconductors. 54:1047-1050
It is known that diamond-like carbon layers consist of carbon components with sp2 (graphite) and sp3 (diamond) hybridizations of electron orbitals. The quantitative ratio between sp2 and sp3 components has a profound effect on the structural, morphol
Autor:
Vladimir A. Isaev, A. L. Vikharev, M. A. Lobaev, Yu. N. Drozdov, S. A. Bogdanov, D. B. Radishchev, A. M. Gorbachev, V. I. Shashkin, E. A. Arkhipova, S. A. Kraev, A. E. Parafin, M. N. Drozdov
Publikováno v:
Technical Physics Letters. 46:551-555
The influence of pulsed laser annealing on the formation of ohmic molybdenum /titanium contacts to the diamond has been studied. Using the method of secondary ion mass spectrometry, it has been shown that the laser annealing of the contacts results i
Autor:
Yu. N. Drozdov, O. A. Streletskii, Pavel A. Yunin, A. E. Ieshkin, M. N. Drozdov, A. I. Okhapkin
Publikováno v:
Technical Physics Letters. 46:290-294
We have studied a new approach to the analysis of carbon-containing materials by secondary ion mass spectrometry (SIMS), which allows determining the contents of carbon atoms in sp2 and sp3 hybridization states. According to this, the main SIMS param
Autor:
A. M. Gorbachev, Vladimir A. Isaev, M. N. Drozdov, E. A. Arkhipova, S. A. Kraev, M. A. Lobaev, V. I. Shashkin, A. L. Vikharev, Yu. N. Drozdov, S. A. Bogdanov, E. V. Demidov, D. B. Radishchev
Publikováno v:
Technical Physics. 64:1827-1836
The formation of Au/Mo/Ti ohmic contacts to p-diamond epitaxial films has been studied. Specifically, the influence of annealing on the electrical properties and structure of contacts has been investigated. It has been shown that the upper gold layer
Publikováno v:
Semiconductors. 54:1147-1149
The features of the surface shape of GaAs epitaxial layers grown on grooves several micrometers wide with vertical walls and an aspect ratio close to unity are investigated. The grooves are formed on the surface of a GaAs wafer in a plasma-chemical e
Publikováno v:
Technical Physics Letters. 45:48-52
New possibilities offered by the method of secondary ion mass spectrometry (SIMS) for analysis of the phase composition of carbon-containing materials are considered. Differences are established between the mass spectra of three carbon phases: diamon
Publikováno v:
Semiconductors. 52:1491-1494
The deformation of a (0001)GaN epitaxial layer on the (11 $$\bar {2}$$ 0) sapphire a-cut is studied by X-ray diffractometry. Anisotropic-layer deformation is calculated by reference data on the thermal expansion coefficients of gallium nitride and sa
Publikováno v:
Semiconductors. 52:1412-1415
The structural properties of GaN(0001) heteroepitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) on a-plane (11 $$\bar {2}$$ 0) sapphire substrates are investigated by X-ray diffractometry. Anisotropy of the rocking-curve width for the
Autor:
Yu. N. Drozdov, D. B. Radischev, A. V. Koliadin, V. I. Shashkin, Pavel A. Yunin, S. A. Korolev, E. A. Surovegina, P. V. Volkov
Publikováno v:
Semiconductors. 52:1432-1436
The morphological and structural properties of a series of high-pressure high-temperature (HPHT) single-crystal diamond substrates are comprehensively studied by white-light optical interference microscopy, atomic-force microscopy, and X-ray diffract
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:701-704
The features of the analysis of thin films by small-angle X-ray reflectometry and grazing incidence X-ray diffractometry are considered by the example of tantalum films. In particular, it is shown that a substantial shift of the diffraction peak at s