Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yu. M. Pokotilo"'
Autor:
Olga V. Korolik, Yu. M. Pokotilo, G. F. Stelmakh, Vladimir P. Markevich, Anis Saad, Ivan A. Svito, O. Yu. Smirnova, A. M. Petuh
Publikováno v:
Journal of Applied Spectroscopy. 86:822-824
Transformations of structural defects, the hydrogen state, and electrophysical properties of silicon treated in hydrogen plasma are studied. Treatment in plasma (150°C) produces bands in Raman spectra at 2095 and 2129 cm–1 that are associated with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::154d3c346a4fb1f6850c64acc98ff07c
https://doi.org/10.1007/s10812-019-00900-7
https://doi.org/10.1007/s10812-019-00900-7
Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies
Autor:
K. A. Solyanikova, Vladimir P. Markevich, A. V. Giro, A. N. Petukh, Nickolay Abrosimov, V. V. Litvinov, Yu. M. Pokotilo, A. S. Kamyshan
Publikováno v:
Semiconductors. 50:1122-1124
The distributions of hydrogen-containing donors in Ge1–xSix (0 ≤ x ≤ 0.06) alloys implanted with hydrogen ions with an energy of 200 and 300 keV and a dose of 1 × 1015 cm–2 are studied. It is established that, at the higher ion energy, the l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa93458a3f7c88250b81521d9cd74a98
https://doi.org/10.1134/s1063782616080182
https://doi.org/10.1134/s1063782616080182
Publikováno v:
Inorganic Materials. 45:1205-1209
The formation of shallow hydrogen donors in epitaxial silicon implanted with 300-keV hydrogen ions has been studied at implant doses from 1013 to 6 × 1015 cm−2, using commercial Mo-Si Schottky diodes with the active base region made of epitaxial p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a602cd1804c0ce778279dfb79ac8b74
https://doi.org/10.1134/s0020168509110016
https://doi.org/10.1134/s0020168509110016
Autor:
A. N. Petukh, Yu. M. Pokotilo
Publikováno v:
Вестник Белорусско-Российского университета. :139-145
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dac312b65b039a9e9a057e48e2c191a2
https://doi.org/10.53078/20778481_2008_4_139
https://doi.org/10.53078/20778481_2008_4_139
Publikováno v:
Semiconductors. 39:768-771
The reconstruction of shallow-level hydrogen-containing donors in Si is studied. The donors are formed by implantation of low-energy (300 keV) hydrogen ions into the experimental samples and subsequent heat treatment at 450°C. The experiments are ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b2acda2fbb6ac57243a9e96fe1889de
https://doi.org/10.1134/1.1992630
https://doi.org/10.1134/1.1992630
Publikováno v:
Journal of Engineering Physics and Thermophysics. 72:238-243
In producing compositions by the method of dry mixing of the components, the effect of the type and concentration of the hardener and the temperature regime of hardening on the process of formation of a three-dimensional polymer structure and the tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::683c942aa2659ecd3c7525522b56b194
https://doi.org/10.1007/bf02699145
https://doi.org/10.1007/bf02699145
Autor:
L. Dobaczewski, V. V. Litvinov, Anthony R. Peaker, Vladimir P. Markevich, K. Bonde Nielsen, A. N. Petukh, Yu. M. Pokotilo, Nickolay Abrosimov
Publikováno v:
Thin Solid Films. 517:419-421
It is found that shallow hydrogen-related donors are formed in the proton-implanted dilute Ge 1 − х Si х alloys (0 ≤ x ≤ 0.031) as well as in Si-free Ge samples upon heat-treatments in the temperature range 225–300 °C. The maximum concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39c465a9344310c31107825aa2fa04df
https://doi.org/10.1016/j.tsf.2008.08.122
https://doi.org/10.1016/j.tsf.2008.08.122
Publikováno v:
Semiconductors. 42:873-875
The method of C-V characteristics has been used to study the accumulation kinetics of double and shallow hydrogen-related donors in proton-implanted epitaxial silicon. It is shown that the kinetics corresponds to the first-order reactions. The activa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1935b88c4c16cdd9be8228123b3adba6
https://doi.org/10.1134/s1063782608070208
https://doi.org/10.1134/s1063782608070208
Publikováno v:
Journal of Applied Spectroscopy. 64:668-672
Spectral dependences of the coefficients of absorption by free carriers and of multiphoton absorption by a silicon lattice in the region of the interstitial oxygen band at 5.8 μm are established. A procedure for measurement of the distribution of ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae0f8f4f476b660b5151a2dfbf1dc710
https://doi.org/10.1007/bf02675331
https://doi.org/10.1007/bf02675331
Publikováno v:
Crystallography Reports. 46:1046-1048
Oxygen distribution in a Si crystal (100 mm in diameter) has been studied by the absorption method in the range of the absorption band of interstitial oxygen, λ = 5.81 μm. Large-scale fluctuations (∼1 cm) of the oxygen concentration (N 0) along t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d924257005e96782fe3ff4ddd854e40b
https://doi.org/10.1134/1.1420842
https://doi.org/10.1134/1.1420842