Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Yu. M. Chesnokova"'
Publikováno v:
Crystallography Reports. 62:597-601
The effect of He+ ion implantation and subsequent annealing on the silicon-on-sapphire microstructure is studied by transmission electron microscopy and X-ray diffraction analysis. It is established that He+ ion implantation leads to the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88a73961552a11429bcdea031275b073
https://doi.org/10.1134/s1063774517040058
https://doi.org/10.1134/s1063774517040058
Autor:
Prutskov, G. prutskov@zoho.com, Chesnokov, Yu.1, Vasilliev, A.1, Likhachev, I.1, Pashaev, E.1, Subbotin, I.1
Publikováno v:
Crystallography Reports. Nov2017, Vol. 62 Issue 6, p955-959. 5p.
Autor:
Chesnokova, Yu.1, Aleksandrova, P.1, Belova, N.1, Shemardov, S.1, Vasiliev, A. a.vasiliev56@gmail.com
Publikováno v:
Crystallography Reports. Jul2017, Vol. 62 Issue 4, p597-601. 5p.
Autor:
Chernoglazov, K.1, Nikolaev, S.1, Rylkov, V. vvrylkov@mail.ru, Semisalova, A., Zenkevich, A.2, Tugushev, V.1, Vasil'ev, A.1, Chesnokov, Yu.1, Pashaev, E.1, Matveev, Yu.2, Granovskii, A.3, Novodvorskii, O.4, Vedeneev, A.5, Bugaev, A., Drachenko, O.6, Zhou, S.7
Publikováno v:
JETP Letters. Apr2016, Vol. 103 Issue 7, p476-483. 8p.
Publikováno v:
Nanotechnologies in Russia; Jan2019, Vol. 14 Issue 1/2, p7-15, 9p