Zobrazeno 1 - 10
of 666
pro vyhledávání: '"Yu. Kozlov"'
Autor:
Ulyana M. Matveyenka, Elena A. Skryleva, Elena N. Abramova, Roman Yu. Kozlov, Pavel V. Pavlov, Ivan V. Sidelnikov, Olesya S. Pavlova
Publikováno v:
Modern Electronic Materials, Vol 10, Iss 3, Pp 167-175 (2024)
Rapid development of III–V semiconductor device technologies and broadening of device applications are hindered by the high density of surface states produced in those materials by intrinsic complex oxides and surface contaminations. Surface oxides
Externí odkaz:
https://doaj.org/article/06056690f148439ab979829ab565a1b8
Autor:
Artem Z. Gayazov, Oleg Z. Gaiazov, Viacheslav Yu. Kozlov, Sergey V. Pavlov, Aleksandr A. Samsonov
Publikováno v:
Nuclear Energy and Technology, Vol 9, Iss 3, Pp 183-187 (2023)
One of the safety requirements regarding the shipping cask for spent nuclear fuel is that its leak-tightness should be maintained by preserving the cask body structural integrity and the sealing system tightness under normal and accident transportati
Externí odkaz:
https://doaj.org/article/6b47db01b4664e7199b9abe3fbfe6b5a
Рассмотрены результаты измерений энергетического разрешения перспективного сцинтилляционного кристалла Се :GAGG, выращенного в Научно-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1594::b5ed145d70942459d7c8e912bd9ef645
http://elib.bsu.by/handle/123456789/231486
http://elib.bsu.by/handle/123456789/231486
Autor:
Elena N. Abramova, Roman Yu. Kozlov, Anatoliy I. Khokhlov, Yuriy V. Syrov, Yuriy N. Parkhomenko
Publikováno v:
Конденсированные среды и межфазные границы, Vol 26, Iss 1 (2024)
Modern electronic and optical engineering uses А3В5 single-crystal semiconductor materials (GaAs, GaSb, InAs, InSb, and InP) as substrates for epitaxial growth. These materials are obtained in the form of massive single-crystal ingots. Therefore, t
Externí odkaz:
https://doaj.org/article/748f52e95dce46bda70c3fef048843b9
Autor:
E. V. Kuftyak, A. S. Slyusarev, A. V. Palin, M. Yu. Kozlov, E. D. Ivanitskaya, Yu. M. Rumyanceva, G. V. Bagryancev
Publikováno v:
Обозрение психиатрии и медицинской психологии имени В.М. Бехтерева, Vol 57, Iss 2, Pp 40-49 (2023)
The study shows how insecure attachment types (anxious and avoidant) are associated with traits of the «dark triad» (narcissism, psychopathy and Machiavellianism) in a sample of patients with borderline personality disorder. It was found that among
Externí odkaz:
https://doaj.org/article/fb45821a01e343b0ab7a0c620550d885
Autor:
Yuri N. Parkhomenko, Aleksandr G. Belov, Elena V. Molodtsova, Roman Yu. Kozlov, Svetlana S. Kormilitsina, Eugene O. Zhuravlev
Publikováno v:
Modern Electronic Materials, Vol 8, Iss 4, Pp 165-171 (2022)
The concentrations of conduction electrons in n-GaSb at 295 and 77 K have been calculated taking into account the non-parabolic deviation of the conduction band shape. We show that at T = 295 K the concentration of heavy electrons in the L-valley of
Externí odkaz:
https://doaj.org/article/751bf4f187544ba5a271c72f77da3ae3
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 2, Pp 73-78 (2021)
Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches.
Externí odkaz:
https://doaj.org/article/101f3ebc0ecb45bc8621c949723eb041
Autor:
Svetlana S. Kormilitsina, Elena V. Molodtsova, Stanislav N. Knyzev, Roman Yu. Kozlov, Dmitry A. Zavrazhin, Elena V. Zharikova, Yuri V. Syrov
Publikováno v:
Modern Electronic Materials, Vol 6, Iss 4, Pp 147-153 (2020)
Thin (100) wafers of single crystal undoped InSb have been strength tested by plane transverse bending. The strength of the wafers (≤ 800 mm in thickness) has been shown to depend on their mechanical treatment type. If the full mechanical treatment
Externí odkaz:
https://doaj.org/article/67bf523b36b24853a97193a5a8f0976d
Autor:
Kirill D. Morozov, Sergey M. Sharkov, Michail Yu. Kozlov, Pavel A. Mordvin, Maxim I. Ayrapetyan, Dmitry A. Morozov
Publikováno v:
Russian Journal of Pediatric Surgery, Anesthesia and Intensive Care. 13:105-112
This paper presents the treatment course of a 13-year-old child with Meckels gangrenous-perforative diverticulitis complicated by diffuse peritonitis. The perforation was localized at the base of Meckels diverticulum; therefore, ileal resection was p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e611d845511f163837a1452cd16cfdc
https://doi.org/10.17816/psaic1498
https://doi.org/10.17816/psaic1498
Autor:
D. Yu. Kozlov
Publikováno v:
Herald of the Russian Academy of Sciences. 92:S1070-S1079
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::796911f92fe58d984ff0c6ce39b3653d
https://doi.org/10.1134/s1019331622170099
https://doi.org/10.1134/s1019331622170099