Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yu. I. Chigirinskii"'
Autor:
Yu. I. Chigirinskii, V. V. Sdobnyakov, V. P. Lesnikov, N. V. Sakharov, Yu. A. Dudin, Maksim Boldin, V. N. Trushin, G. V. Vazenmiller, A. A. Bobrov, O. A. Belkin, E. S. Demidov
Publikováno v:
Technical Physics. 63:1002-1005
The paper presents a method for manufacturing mechanically strong sputtering composite targets containing the phase of the Co2FeSi or Co2MnSi Heusler alloy of the stoichiometric composition, which can be used for fabrication of spin electronic device
Autor:
Alexey Belov, D. A. Pavlov, A. I. Bobrov, Yu. I. Chigirinskii, N. E. Demidova, O. N. Gorshkov, M. V. Karzanova, Alexey Mikhaylov, David Tetelbaum, D. S. Korolev, E. S. Demidov
Publikováno v:
Physics of the Solid State. 56:631-634
Using transmission electron microscopy and elemental analysis, it has been shown that tungsten telluride glass (TTG) containing erbium and ytterbium as impurities penetrates into pores of porous silicon (PS) when melted in vacuum at 500°C. It has be
Autor:
E. S. Demidov, Yu. I. Chigirinskii, Ivan Antonov, K. V. Sidorenko, A. N. Shushunov, M. V. Karzanova
Publikováno v:
Physics of the Solid State. 55:301-305
The effect of preliminary oxidation annealing of porous silicon (PS) on photoluminescence (PL) under laser pumping at wavelengths of 532 and 980 nm, EPR, and transverse current transport in structures based on PS with a fused tungsten-tellurium glass
Autor:
N. E. Demidova, E. S. Demidov, Alexey Belov, Yu. I. Chigirinskii, David Tetelbaum, E. A. Evropeitsev, A. N. Shushunov, O. N. Gorshkov, Alexey Mikhaylov, M. V. Karzanova
Publikováno v:
Physics of the Solid State. 53:2415-2420
It has been shown that the presence of silicon nanoparticles in a layer of porous silicon saturated with tungsten-tellurite glass causes an increase in the photoluminescence quantum efficiency of erbium (1530 nm) by an order of magnitude in the case
Autor:
A. N. Shushunov, A. B. Chigineva, O. N. Gorshkov, Yu. I. Chigirinskii, E. S. Demidov, G. A. Maksimov, A. P. Kasatkin, V. F. Lebedev, S. A. Tyurin, E. M. Dianov
Publikováno v:
Semiconductors. 36:1221-1224
The temperature dependence of photoluminescence spectra in the wavelength range of 1.1–1.4 μm was measured at temperatures of 77–573 K in single-crystal Ca2GeO4:Cr+ films deposited onto the (110) surface of Ca2GeO4 single crystal and studied. Th
Publikováno v:
Physics of the Solid State. 44:52-57
The luminescence of Ca2GeO4: Cr4+ single crystals at wavelengths in the range of 1.3 μm upon excitation with a 1-μ m semiconductor laser is investigated in the temperature range up to 573 K. At T
Autor:
Yu. I. Chigirinskii, E. B. Intyushin
Publikováno v:
Glass Physics and Chemistry. 31:162-164
Using radio-frequency magnetron sputtering, it is demonstrated that amorphous films based on a tungsten tellurite glass can be deposited on different substrates (such as opal, sapphire, fused silica, Corning glass 1737, and tellurite glass). The effe
Publikováno v:
Instruments and Experimental Techniques. 47:662-664
A simple method for measuring Raman light scattering by thin films is proposed. It allows the negative effect of the substrate material onto which various coatings are deposited to be excluded. Raman scattering spectra are presented.
Autor:
M. D. Mikhailov, A. B. Chigineva, Yu. I. Chigirinskii, A. P. Kasatkin, O. N. Gorshkov, V. A. Kamin, A. V. Dmitryuk, V. A. Novikov
Publikováno v:
Technical Physics Letters. 30:325-327
We have studied the effect of irradiation with hydrogen and helium ions on the photoluminescence (PL) of phosphate films doped with ytterbium and erbium. The irradiation with hydrogen ions leads to more effective quenching of the PL from erbium ions
Autor:
M. I. Samoilovich, Yu. I. Chigirinskii, Andrey V. Gur'yanov, E. B. Intyushin, M. Yu. Tsvetkov
Publikováno v:
Journal of Applied Spectroscopy. 70:323-325
We carried out a comparative investigation of the photoluminescence of Er3+ ions in tellurite glasses on melted quartz substrates and when introduced into the matrices of artificial opal. We have discovered an increase in the photoluminescence of the