Výsledky vyhledávání - "Yu. G. Musikhin"

Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them

Autor: W. V. Lundin, V. S. Sizov, Andrey E. Nikolaev, Yu. G. Musikhin, S. O. Usov, Dagmar Gerthsen, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin

Publikováno v: Semiconductors. 45:271-276

Results of studies of hydrogen addition during the growth of thin (∼2–3 nm) InGaN layers on their structural properties and properties of light-emitting structures that contain InGaN/GaN heterostructures in the active region are reported. It is s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d2a59a59cf5c4605aff5d97a8709e00
https://doi.org/10.1134/s1063782611020230

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INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR

Autor: A. S. Vlasov, N. N. Ledentsov, Yu. G. Musikhin, Alexander Mintairov, V. S. Sizov, V. V. Lundin, A. F. Tsatsul’nikov, K. Sun, James L. Merz, E. E. Zavarin, D. S. Sizov

Publikováno v: International Journal of Nanoscience. :327-332

InGaN quantum dot (QD) formation in a wide pressure range MOCVD reactor was studied. The existence of QDs and their lateral size (2–5 nm) were demonstrated using transmission electron microscopy and high spatial resolution (~ 100 nm) near-field mag

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::351522a88ec5293aab106b6cd14195a2
https://doi.org/10.1142/s0219581x07004882

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Metamorphic InAs quantum dots: Photoluminescence features related to cooperative phenomena in the quantum dot-matrix system

Autor: A. G. Gladyshev, V. S. Petrov, A. P. Vasil’ev, V. S. Mikhrin, V. V. Ratnikov, N. V. Kryzhanovskaya, A. E. Zhukov, N. M. Shmidt, Yu. G. Musikhin

Publikováno v: Technical Physics Letters. 33:590-593

The photoluminescence (PL) characteristics have been studied in two series of nanostructures comprising metamorphic InAs quantum dots (QDs) in In x Ga1−x As matrices of variable composition (x = 0.14–0.30) with and without 5-nm-thick inserts of I

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c4887045ac366553ffc2cc0707816ea
https://doi.org/10.1134/s1063785007070152

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Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots

Autor: Yu. G. Musikhin, Robert A. Suris, V. V. Lundin, A. F. Tsatsul’nikov, D. S. Sizov, E. E. Zavarin, V. S. Sizov, Nikolai N. Ledentsov

Publikováno v: Semiconductors. 41:575-589

Electronic and optical properties of ensembles of quantum dots with various energies of activation from the ground-state level to the continuous-spectrum region were studied theoretically and experimentally with the InGaN quantum dots as an example.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1b30da93bbf9debb212a3478b96d30aa
https://doi.org/10.1134/s1063782607050193

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Analysis of the local indium composition in ultrathin InGaN layers

Autor: A. V. Sakharov, A. F. Tsatsul’nikov, D. S. Sizov, E M Arakcheeva, S. O. Usov, N. A. Bert, E. E. Zavarin, N. N. Ledentsov, Yu. G. Musikhin, V. V. Lundin

Publikováno v: Semiconductor Science and Technology. 22:528-532

Experimental photoluminescence (PL) spectra and structural properties of the ultrathin InGaN insertions in an AlGaN matrix grown on a sapphire substrate were investigated. The PL emission mechanism was shown to be governed by the quantum dot (QD)-lik

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24e3a6ecaa0fff29a8b65dfe6d9ca53a
https://doi.org/10.1088/0268-1242/22/5/012

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Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature

Autor: Mikhail A. Putyato, V. V. Chaldyshev, A. V. Boĭtsov, V. V. Preobrazhenskiĭ, M. A. Yagovkina, B. R. Semyagin, N. A. Bert, Yu. G. Musikhin

Publikováno v: Semiconductors. 40:758-762

Transmitting electron microscopy and X-ray diffractometry are used to study the GaAs layers undoped or doped uniformly with phosphorus (2.3 mol %) and grown at a temperature of 250°C and then annealed isochronously at 400, 500, 600, or 700°C. It is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c84adfec5011ea78785bca50272c070
https://doi.org/10.1134/s1063782606070025

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Localization of non‐equilibrium carriers in deep InGaN quantum dots and its impact on the device performance

Autor: A. F. Tsatsul'nikov, Yu. G. Musikhin, Alexander Mintairov, D. S. Sizov, K. Sun, E. E. Zavarin, James L. Merz, V. S. Sizov, A. S. Vlasov, V. V. Lundin, N. N. Ledentsov

Publikováno v: physica status solidi c. 3:2043-2047

Structural and optical properties of MOCVD grown InGaN quantum dot (QD) layers have been studied using transmission electron microscopy, X-ray diffraction, near-field spectroscopy and selectively excited photoluminescence. We have shown that the pres

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c08bfd4129d11c06168c18a285b48ca6
https://doi.org/10.1002/pssc.200565465

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An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures

Autor: Nikolai A. Maleev, P. S. Kopjev, Zh. I. Alferov, I. A. Zamoryanskaya, V. T. Punin, V. M. Ustinov, S. G. Konnikov, M. A. Yagovkina, R. I. Ilkaev, Pavel N. Brunkov, A. A. Gutkin, A. V. Bobyl, Yu. G. Musikhin, D. A. Sakseev

Publikováno v: Semiconductors. 40:687-690

The influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs transistor heterostructures has been studied by means of X-ray diffraction analysis and transmission electron microscopy. It was found that irradiation with doses exceeding ∼3 × 107

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::46dc3560d22319a656e9a61efd74ab06
https://doi.org/10.1134/s1063782606060145

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Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots

Autor: A. E. Zhukov, V. S. Mikhrin, A. G. Gladyshev, A. P. Vasil’ev, Elizaveta Semenova, Yu. G. Musikhin, N. N. Ledentsov, A. M. Nadtochy, V. M. Ustinov, N. V. Kryzhanovskaya, Mikhail V. Maximov

Publikováno v: physica status solidi (a). 203:1359-1364

Optical properties of self-organized QDs grown on thick metamorphic InGaAs layers with different In composition are studied. The dots are formed by an overgrowth of original InAs islands with thin InGaAs or InAlAs layers. Room temperature photolumine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4cfd8ff6fb751de1f0188fae6088600b
https://doi.org/10.1002/pssa.200566178

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InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4–1.8 μm

Autor: N. V. Kryzhanovskaya, A. G. Gladyshev, A. P. Vasil’ev, Yu. G. Musikhin, A. E. Zhukov, Elizaveta Semenova, A. Yu. Egorov, V. M. Ustinov, V. S. Mikhrin

Publikováno v: Semiconductors. 40:342-345

Heterostructures with InGaNAs quantum wells (QWs) that contain InAs monolayer insertions and are confined between InGaNAs/GaNAs superlattices, grown on GaAs substrates by molecular-beam epitaxy, have been studied. At high indium concentrations, a tra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c152710f619f453da813f46b5f1980cf
https://doi.org/10.1134/s106378260603016x

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