Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Yu. F. Trush"'
Publikováno v:
Crystallography Reports. 48:187-191
The influence of photoexcitation on the formation of the defect structure in GaAs crystals implanted with 200 keV Ar+ ions at doses of 1 × 1013, 3 × 1013, and 5 × 1013 cm−2 has been studied by high-resolution Xray diffractometry. It was found th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a5cdbee8b79d97249a17b0dde46e5c9
https://doi.org/10.1134/1.1564192
https://doi.org/10.1134/1.1564192
Publikováno v:
Crystallography Reports. Mar2003, Vol. 48 Issue 2, p187. 5p.