Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Yu. Bilenko"'
Autor:
Yu. Bilenko, Qhalid Fareed, R. Gaska, Romualdas Rimeika, Daumantas Ciplys, Jimei Zhang, A. Lunev, Michael Shur, A. Sereika, Xiaobo Sharon Hu
Publikováno v:
physica status solidi (a). 203:1834-1838
We have demonstrated the possibility of controlling the frequency of an AlGaN-based SAW delay-line oscillator by LEDs emitting in deep UV range. The energy bandgap of AlGaN corresponded to the cutoff wavelength of 270 nm. The deep UV LEDs used in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8fc47b9242833c3557dd1f9f4910d2e
https://doi.org/10.1002/pssa.200565218
https://doi.org/10.1002/pssa.200565218
Autor:
Maxim S. Shatalov, Shuai Wu, Yu. Bilenko, A. Chitnis, Jinwei Yang, R. Gaska, Wenhong Sun, M. Asif Khan, Vinod Adivarahan
Publikováno v:
physica status solidi (c). 2:2832-2835
High power 250–280 nm deep ultraviolet (UV) light emitting diode (LED) structures were grown by migration-enhanced metal organic chemical vapour deposition (MEMOCVD) approach allowing for very high material quality for high aluminum composition Alx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d67953f8d0cf7345aa7dcef12373405
https://doi.org/10.1002/pssc.200461524
https://doi.org/10.1002/pssc.200461524
Autor:
Sergey L. Rumyantsev, Martin Muschol, A. L. Obaid, Yu. Bilenko, Brian M. Salzberg, Paul Kosterin, Michael Shur
Publikováno v:
Journal of Neuroscience Methods. 141:165-169
We demonstrate that high power light-emitting diodes (LED’s) exhibit low-frequency noise characteristics that are clearly superior to those of quartz tungsten halogen lamps, the non-coherent light source most commonly employed when freedom from int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61c47b5c274831344cbd331f96c1429f
https://doi.org/10.1016/j.jneumeth.2004.06.009
https://doi.org/10.1016/j.jneumeth.2004.06.009
Publikováno v:
Journal of Applied Physics. 96:966-969
Low frequency fluctuations in light intensity were measured from five different types of commercially available light emitting diodes with wavelengths from 375 nm to 740 nm and from two different halogen lamps. At low frequencies below 10–100 Hz so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::246137a6ce134ca5827204eeb0c20ff9
https://doi.org/10.1063/1.1763225
https://doi.org/10.1063/1.1763225
Autor:
Xiaobo Sharon Hu, A. Lunev, J. W. Yang, Yu. Bilenko, R. Gaska, Max Shatalov, J. P. Zhang, J. Deng, Michael Shur, M.A. Khan
Publikováno v:
Applied Physics Letters. 85:5532-5534
Optimization of the migration-enhanced metalorganic chemical vapor deposition and further optimization of the contact and active layer design for 280nm light-emitting diodes resulted in large improvement of cw and pulsed output power and in a superio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0e374b5e1879e0cb4123e07cad86423
https://doi.org/10.1063/1.1831557
https://doi.org/10.1063/1.1831557
Autor:
Qhalid Fareed, Yu. Bilenko, R. Gaska, F. Pascal, A. Hoffman, Michael Shur, Wojciech Knap, Nina Dyakonova, Sergey Rumyantsev, Y. M. Meziani, Xiaobo Sharon Hu
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2004, 96 (7), pp.3845-3847. ⟨10.1063/1.1787911⟩
Journal of Applied Physics, American Institute of Physics, 2004, 96 (7), pp.3845-3847. ⟨10.1063/1.1787911⟩
International audience; 1/f noise in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors has been measured at 300 K in strong magnetic fields up to 10 T. The devices exhibited strong geometric magnetoresistance. The magnetic-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b13e18e1693f9bb611587da8d91ee47
https://doi.org/10.1063/1.1787911
https://doi.org/10.1063/1.1787911
Autor:
J. Deng, Xiaobo Sharon Hu, Nezih Pala, J. P. Zhang, Sergey L. Rumyantsev, Shayla Sawyer, A. Lunev, Michael Shur, R. Gaska, Yu. Bilenko
Publikováno v:
SPIE Proceedings.
Light emitting diodes (LEDs) are excellent candidates for the applications requiring low noise light sources with wavelengths ranging from 200 nm to 900 nm. These applications include the detection of fluorescence from protein molecules excited with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::296a0d13554f78073ac4925c81af247d
https://doi.org/10.1117/12.608559
https://doi.org/10.1117/12.608559
Autor:
Yu. Bilenko, Xiaobo Sharon Hu, Michael Shur, Qhalid Fareed, Nina Dyakonova, Y. M. Meziani, R. Gaska, Wojciech Knap, F. Pascal, Alain Hoffmann, Sergey L. Rumyantsev
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2005, 202 (4), pp.677-679. ⟨10.1002/pssa.200460472⟩
physica status solidi (a), Wiley, 2005, 202 (4), pp.677-679. ⟨10.1002/pssa.200460472⟩
International audience; The influence of strong magnetic field on the 1/f noise in AlGaN/GaN metal-oxide-Semiconductor heterostructure field effect transistors (MOSHFETs) has been studied. The independence of 1/f noise on the magnetic fields up to 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be2da7fa883524780f7a20861e890095
https://hal.archives-ouvertes.fr/hal-00328659
https://hal.archives-ouvertes.fr/hal-00328659
Autor:
Nezih Pala, J. Deng, Shayla Sawyer, J. P. Zhang, A. Lunev, Xiaobo Sharon Hu, Sergey Rumyantsev, R. Gaska, Michael Shur, Yu. Bilenko
Publikováno v:
Journal of Applied Physics. 100:034504
Low frequency noise of current and light intensity of ultraviolet light emitting diodes (LED) with wavelength from 265to340nm are the superposition of the 1∕f and generation-recombination noise. The dependence of generation-recombination noise on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::907a7722b12eeb0d0fca2f66ebbe13de
https://doi.org/10.1063/1.2204355
https://doi.org/10.1063/1.2204355
Autor:
Qhalid Fareed, Romualdas Rimeika, R. Gaska, Daumantas Ciplys, J. Sinius, Michael Shur, Yu. Bilenko
Publikováno v:
Electronics Letters. 42:1254
The UV-LED controlled phase shifter of an RF signal based on a GaN-sapphire surface-acoustic-wave (SAW) filter has been implemented. At the optical wavelength 298 nm and SAW frequency 307 MHz, the UV-induced relative change in SAW velocity per unit o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d50a985b9759ec291a19677d753cf0a
https://doi.org/10.1049/el:20062028
https://doi.org/10.1049/el:20062028