Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Yu. B. Vasilyev"'
Publikováno v:
2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
We report electroluminescence experiments on HgTe/Cd 0.7 Hg 0.3 Te quantum wells with inverted band structure in strong lateral electric fields. The electroluminescence is found to appear above a critical bias. Spectral measurements show emission pea
Publikováno v:
Semiconductors. 53:1672-1676
The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is
Autor:
Yu. B. Vasilyev, A. A. Greshnov, Rolf J. Haug, Nikolay N. Mikhailov, G. Yu. Vasilyeva, A. A. Usikova
Publikováno v:
Semiconductors. 53:930-935
The longitudinal and Hall components of the resistivity tensor are measured in structures with multiple HgTe layers 16 nm thick in magnetic fields to 12 T at temperatures from 1.5 to 300 K. The slope of the magnetic-field dependence of the Hall resis
Autor:
Yu. B. Vasilyev, S. Novikov
Publikováno v:
PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019).
We report terahertz photoconductivity in epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. The photoresponse signal was measured at wavelengths of 280, 148 and 90 mic
The terahertz photoconductivity of epitaxial graphene grown on a SiC substrate is studied in magnetic fields. Under a magnetic field applied perpendicular to the sample’s plane, a strong increase in the photoconductivity signal was detected due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c8f202a76f8cf165ba8fe2d3c0950de
Autor:
A. V. Andrianov, Yu. B. Vasilyev, A. O. Zakhar’in, V. V. Zabrodskii, S. V. Egorov, Nikolai A. Sobolev
Publikováno v:
Semiconductors. 51:604-607
Injection-induced terahertz electroluminescence from silicon p +–n structures is observed at helium temperatures. Structures fabricated by the diffusion of boron into a phosphorus-doped n-Si substrate are studied. Relatively narrow luminescence lin
Autor:
Yu. B. Vasilyev
Publikováno v:
Semiconductors. 54:1664-1665
Recently Ma et al. (Nature Nanotech. 14, 145, 2019) reported an intrinsic photocurrent in graphene, which occurs as the authors believe “in a different parameter regime from all the previously observed photothermoelectric or photovoltaic photocurre
Autor:
A. O. Zakhar’in, Yu. L. Ivanov, G. Yu. Vasilyeva, A. V. Andrianov, Yu. B. Vasilyev, L. E. Vorobiev, A. V. Ikonnikov, V. I. Gavrilenko, M. N. Grigoriev, A. V. Antonov, Nikolay N. Mikhailov, D. A. Firsov
Publikováno v:
Semiconductors. 50:915-919
The terahertz electroluminescence from Cd0.7Hg0.3Te/HgTe quantum wells with an inverted band structure in lateral electric fields is experimentally detected and studied. The emission-spectrum maximum for wells 6.5 and 7 nm wide is near 6 meV which co
Autor:
Nikolay N. Mikhailov, Christopher Belke, Yu. B. Vasilyev, G. Yu. Vasileva, A. A. Usikova, A. A. Greshnov, Rolf J. Haug
Publikováno v:
EPL (Europhysics Letters). 128:47001
Autor:
G. Yu. Vasileva, S. A. Tarasenko, S. Novikov, Yu. B. Vasilyev, S. N. Danilov, Sergey Ganichev
We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86dcfce928cbe2b746ca1066f1e16eb5