Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Yu. B. Vasil'ev"'
Autor:
N. A. Verezub, V. Ya. Reznik, Yu. B. Vasil’ev, M. V. Mezhennyi, V. S. Prosolovich, A. I. Prostomolotov
Publikováno v:
Russian Microelectronics. 42:467-476
Possibilities of obtaining a defect-free layer in wafers of dislocation-free single-crystal silicon subjected to rapid thermal annealing (RTA) are analyzed. The application of RTA is based on the possibility of effectively affecting the distribution
Publikováno v:
JETP Letters. 97:102-106
Cyclotron-resonance measurements in 21-nm-thick HgTe/CdHgTe quantum wells of different crystallographic orientations have been performed. It has been found that, in contrast to the structures with the (001) orientation of the quantum-well plane, (013
Autor:
Dmitry Smirnov, G. Yu. Vasileva, Hennrik Schmidt, Rolf J. Haug, P. S. Alekseev, G. Nachtwei, Yu. B. Vasil'ev, F. Gouider, Yu. L. Ivanov
Publikováno v:
JETP Letters. 96:471-474
The magnetoresistance of single-layer graphene on a Si/SiO2 substrate is measured in the temperature range of 2.5–150 K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the ma
Publikováno v:
Russian Microelectronics. 37:187-191
This paper reports on an experimental evaluation of an improved multistep method for ion implantation in the case of boron-doped silicon. The new method is compared with the standard one in terms of the electrical performance of test devices (vertica
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 79:545-549
In the cyclotron resonance (CR) spectra of two-dimensional (2D) electrons in InAs quantum wells, the CR line splitting is observed. The splitting is found to be an oscillating function of magnetic field. The oscillations do not correlate with the fil
Autor:
Yu. B. Vasil'ev, P. S. Kop’ev, A. A. Greshnov, S. D. Suchalkin, G. G. Zegrya, Sergei Ivanov, B. Ya. Meltser
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 76:222-226
The mechanism of cyclotron resonance line splitting in the InAs/GaSb heterostructure in an inclined magnetic field has been studied experimentally and theoretically. It is shown that the admixing of electron and hole states leads to anticrossing of t
Autor:
V. A. Solov’ev, P. S. Kop’ev, Yu. B. Vasil'ev, Sergei Ivanov, B. Ya. Meltser, Yu. L. Ivanov, Alexander N. Semenov
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 75:391-394
Far infrared radiation from type-II heterostructures is observed. The samples used for the observations have the form of ten-period cascade structures, each period containing InAs and AlGaAsSb quantum wells separated by a variband barrier. The result
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 74:564-567
Experimental data are reported on studying cyclotron resonance in a two-dimensional electron system with an artificial random scattering potential generated by an array of self-organized AlInAs quantum islands formed in the plane of an AlGaAs/GaAs he
Autor:
K. von Klitzing, Sergei Ivanov, S. D. Suchalkin, Yu. B. Vasil'ev, B. Ya. Meltser, P. S. Kop’ev
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 69:343-347
Splitting of the cyclotron resonance (CR) line is observed in the electron CR spectra of InAs/GaSb heterostructures containing tunneling-coupled electron and hole layers. This splitting is interpreted to be a manifestation of a hybridization gap aris
Autor:
K. von Klitzing, Vitaly N. Golovach, B. Ya. Meltser, P. S. Kop’ev, Sergei Ivanov, Yu. B. Vasil'ev, G. G. Zegrya, S. D. Suchalkin
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 68:792-798
The mechanism of oscillations of the half-width and intensity of the cyclotron resonance (CR) line of electrons in a semimetal quantum well based on an InAs/AlSb/GaSb heterostructure is investigated experimentally and theoretically. It is shown that