Zobrazeno 1 - 10
of 140
pro vyhledávání: '"Yu. B. Vasil'ev"'
Autor:
Dimitri Gidaspow
Publikováno v:
AIChE Journal. 12:823-824
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::971b5998b6ad9460a4973b2a68fb1e59
https://doi.org/10.1002/aic.690120440
https://doi.org/10.1002/aic.690120440
Autor:
N. A. Verezub, V. Ya. Reznik, Yu. B. Vasil’ev, M. V. Mezhennyi, V. S. Prosolovich, A. I. Prostomolotov
Publikováno v:
Russian Microelectronics. 42:467-476
Possibilities of obtaining a defect-free layer in wafers of dislocation-free single-crystal silicon subjected to rapid thermal annealing (RTA) are analyzed. The application of RTA is based on the possibility of effectively affecting the distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8284e0fe47414a91bd4bfa38c16f24fb
https://doi.org/10.1134/s1063739713080155
https://doi.org/10.1134/s1063739713080155
Publikováno v:
JETP Letters. 97:102-106
Cyclotron-resonance measurements in 21-nm-thick HgTe/CdHgTe quantum wells of different crystallographic orientations have been performed. It has been found that, in contrast to the structures with the (001) orientation of the quantum-well plane, (013
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cc04d72960ed43139673319d1b3b4c9
https://doi.org/10.1134/s0021364013020069
https://doi.org/10.1134/s0021364013020069
Autor:
Dmitry Smirnov, G. Yu. Vasileva, Hennrik Schmidt, Rolf J. Haug, P. S. Alekseev, G. Nachtwei, Yu. B. Vasil'ev, F. Gouider, Yu. L. Ivanov
Publikováno v:
JETP Letters. 96:471-474
The magnetoresistance of single-layer graphene on a Si/SiO2 substrate is measured in the temperature range of 2.5–150 K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d600fa09eedf9c1e0f35014dd4c74f4
https://doi.org/10.1134/s0021364012190137
https://doi.org/10.1134/s0021364012190137
Publikováno v:
Russian Microelectronics. 37:187-191
This paper reports on an experimental evaluation of an improved multistep method for ion implantation in the case of boron-doped silicon. The new method is compared with the standard one in terms of the electrical performance of test devices (vertica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01f0bfee8e268ac3c55e1e702e0bd953
https://doi.org/10.1134/s1063739708030062
https://doi.org/10.1134/s1063739708030062
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 79:545-549
In the cyclotron resonance (CR) spectra of two-dimensional (2D) electrons in InAs quantum wells, the CR line splitting is observed. The splitting is found to be an oscillating function of magnetic field. The oscillations do not correlate with the fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f288b9256f11e5e3b64787b867549ae
https://doi.org/10.1134/1.1787103
https://doi.org/10.1134/1.1787103
Autor:
Yu. B. Vasil'ev, P. S. Kop’ev, A. A. Greshnov, S. D. Suchalkin, G. G. Zegrya, Sergei Ivanov, B. Ya. Meltser
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 76:222-226
The mechanism of cyclotron resonance line splitting in the InAs/GaSb heterostructure in an inclined magnetic field has been studied experimentally and theoretically. It is shown that the admixing of electron and hole states leads to anticrossing of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ae0b96a11778117dbe57a88566456f0
https://doi.org/10.1134/1.1517389
https://doi.org/10.1134/1.1517389
Autor:
V. A. Solov’ev, P. S. Kop’ev, Yu. B. Vasil'ev, Sergei Ivanov, B. Ya. Meltser, Yu. L. Ivanov, Alexander N. Semenov
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 75:391-394
Far infrared radiation from type-II heterostructures is observed. The samples used for the observations have the form of ten-period cascade structures, each period containing InAs and AlGaAsSb quantum wells separated by a variband barrier. The result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22aed8a58688fccf5f4b5c4fbdb9ce16
https://doi.org/10.1134/1.1490006
https://doi.org/10.1134/1.1490006
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 74:564-567
Experimental data are reported on studying cyclotron resonance in a two-dimensional electron system with an artificial random scattering potential generated by an array of self-organized AlInAs quantum islands formed in the plane of an AlGaAs/GaAs he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a11eb186ad054ccf44f631873e580502
https://doi.org/10.1134/1.1450292
https://doi.org/10.1134/1.1450292
Autor:
K. von Klitzing, Sergei Ivanov, S. D. Suchalkin, Yu. B. Vasil'ev, B. Ya. Meltser, P. S. Kop’ev
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 69:343-347
Splitting of the cyclotron resonance (CR) line is observed in the electron CR spectra of InAs/GaSb heterostructures containing tunneling-coupled electron and hole layers. This splitting is interpreted to be a manifestation of a hybridization gap aris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9167690a4a1bbe5f498c0fea6c08bf8
https://doi.org/10.1134/1.568034
https://doi.org/10.1134/1.568034