Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Yu. B. Bolkhovityanov"'
Publikováno v:
Physics of the Solid State. 61:145-148
In the Ge/LTGe/GeSi/Si(001) heterostructures, the GeSi buffer layer remains pseudomorphic in a certain range of the heterostructure parameters and growth regimes, while the Ge film is completely relaxed owing to the edge dislocation network at the Ge
Publikováno v:
Journal of Crystal Growth. 483:265-268
Edge dislocations in face-centered crystals are formed from two mixed dislocations gliding along intersecting {1 −1 1} planes, forming the so-called Lomer locks. This process, which is called zipping, is energetically beneficial. It is experimental
Publikováno v:
Journal of Experimental and Theoretical Physics. 123:832-837
The Ge/Ge x Si1–x /Si(001) (x = 0.2–0.6) heterostructures grown by the molecular epitaxy method are analyzed using high-resolution electron microscopy with atomic resolution. The thickness of the Ge x Si1–x buffer layer is 7–35 nm. It is show
Publikováno v:
Philosophical Magazine Letters. 96:361-366
High-resolution electron microscopy (HREM) at the atomic scale has been applied to study the edge dislocation redistribution between interfaces in Ge/Ge0.5Si0.5/Si(0 0 1) heterostructures. Our results provide a direct explanation that plastic relaxat
Publikováno v:
Thin Solid Films. 616:348-350
High-resolution electron microscopy at the atomic scale has been applied to study the edge dislocation redistribution between interfaces in Ge/Ge0.5Si0.5/Si(001) heterostructures. It is demonstrated that such heterostructures relax in two stages: a n
Publikováno v:
Thin Solid Films. 690:137557
Lomer-type edge dislocations (L-dislocations) detected in strained films Ge-on-Si, GaAs-on-Si, etc., are formed from two 60° dislocations sliding along intersecting {111} planes inclined with respect to the (001) substrate. Kvam et al. [J. Mater. Re
Publikováno v:
Physics of the Solid State. 57:765-770
It has been shown that, in the GeSi/Si(001) heterosystem at lattice parameter mismatches of ∼2% and more, a small critical thickness of the introduction of dislocations leads to the implementation of the mechanism of induced nucleation of misfit di
Publikováno v:
Physics of the Solid State. 56:247-253
Heterostructures Ge/Ge x Si1 − x /Si(001) grown by molecular beam epitaxy have been investigated using atomic scale high-resolution electron microscopy. A germanium film (with a thickness of 0.5–1.0 μm) grown at a temperature of 500°C is comple
Autor:
A. P. Vasilenko, A. S. Deryabin, Yu. B. Bolkhovityanov, Leonid V. Sokolov, Anton K. Gutakovskii
Publikováno v:
Acta Materialia. 61:5400-5405
High-resolution electron microscopy has been applied to study the dislocation redistribution between Ge and GeSi layers at the atomic scale. Ge0.3Si0.7 (30 nm in thickness) and Ge0.5Si0.5 (10 nm) buffer layers buried between the Si(0 0 1) substrate a
Publikováno v:
Acta Materialia. 61:617-621
Ge-on-Si(0 0 1) films are grown by molecular beam epitaxy via a three-step epitaxial growth method (Ge/Ge seed/GeSi buffer/Si(0 0 1)). The dislocation structure of the Ge/GeSi buffer interface is studied by high-resolution electron microscopy. Misfit