Výsledky vyhledávání - "Yu. A. Vodakov"

Experimental and theoretical analysis of sublimation growth of AlN bulk crystals

Autor: T.Yu. Chemekova, Yu. A. Vodakov, O.V. Avdeev, I. S. Barash, Heikki Helava, Yu.N. Makarov, G. Huminic, S. Davis, S. S. Nagalyuk, E. N. Mokhov, D. S. Bazarevskiy, A.S. Segal, Alexandr Dmitrievich Roenkov, M.G. Ramm

Publikováno v: Journal of Crystal Growth. 310:881-886

The current status of sublimation growth of aluminum nitride (AlN) bulk crystals is discussed. Growth of AlN single-crystal layers on silicon carbide (SiC) seeds in pre-carbonized tantalum crucibles in graphite equipment and of AlN bulk crystals on t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ded8a013e92e8a4f6cbfc8ef8f65de5f
https://doi.org/10.1016/j.jcrysgro.2007.11.059

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Faceted Growth of SiC Bulk Crystals

Autor: Alexandr Dmitrievich Roenkov, Yu. A. Vodakov, Yu.N. Makarov, J.S. Barash, S. Yu. Karpov, I.D. Matukov, Heikki Helava, Ramm, E. N. Mokhov, M.G. Ramm, D.Kh. Ofengeim, D.S. Kalinin, M.V. Bogdanov

Publikováno v: Materials Science Forum. :63-66

In this paper, we suggest a model of facet formation during bulk SiC growth by Physical Vapor Transport (PVT). The model considers the step-flow growth, with the step density dependent on the local orientation of the crystallization front with respec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aeab11153c75548979e7f0243b45ab39
https://doi.org/10.4028/www.scientific.net/msf.457-460.63

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Modeling of facet formation in SiC bulk crystal growth

Autor: Heikki Helava, D.Kh. Ofengeim, E. N. Mokhov, Yu.N. Makarov, I.D. Matukov, Yu. A. Vodakov, M.V. Bogdanov, J.S. Barash, M.G. Ramm, D.S. Kalinin, Alexandr Dmitrievich Roenkov, M. S. Ramm, S. Yu. Karpov

Publikováno v: Journal of Crystal Growth. 266:313-319

Control of the crystallization front profile is of great importance for various aspects of bulk SiC crystal growth by physical vapor transport. The structural defect density, doping uniformity, and polytype stability are largely dependent on the prof

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::83c013a9da69e99824f903a0f3b70813
https://doi.org/10.1016/j.jcrysgro.2004.02.060

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Analysis of sublimation growth of bulk SiC crystals in tantalum container

Autor: S. Yu. Karpov, Alexandr Dmitrievich Roenkov, M.G. Ramm, M. S. Ramm, A.V. Kulik, Yu. A. Vodakov, Yu.N. Makarov, E. N. Mokhov, I. A. Zhmakin

Publikováno v: Journal of Crystal Growth. 211:347-351

Sublimation growth of SiC bulk crystals in tantalum container is studied both experimentally and theoretically. The model of heterogeneous processes occurred on the side wall of the tantalum container proposed recently in Ramm et al. (Mat. Sci. Eng.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::833fb55e5130e6e7c7f0d5a238163c68
https://doi.org/10.1016/s0022-0248(99)00787-3

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On mechanisms of sublimation growth of AlN bulk crystals

Autor: Yu.N. Makarov, Yu. A. Vodakov, A.S. Segal, M.G. Ramm, Alexandr Dmitrievich Roenkov, S. Yu. Karpov, E. N. Mokhov

Publikováno v: Journal of Crystal Growth. 211:68-72

A novel model of bulk AlN crystal growth by the sublimation technique is developed. The model takes into account both di!usive and convective transport of gaseous Al and N 2 , and the kinetic limitation of nitrogen adsorption/desorption on AlN surfac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4945918c3b927b0c60c1d77a54d17c68
https://doi.org/10.1016/s0022-0248(99)00844-1

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Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas

Autor: S. Yu. Karpov, Yu.N. Makarov, M.G. Ramm, Yu. A. Vodakov, Alexandr Dmitrievich Roenkov, M. S. Ramm, A.N. Vorob'ev, A.S. Segal, E. N. Mokhov

Publikováno v: Journal of Crystal Growth. 208:431-441

Silicon carbide growth by sublimation sandwich method in the atmosphere of an inert gas is studied both experimentally and theoretically. An analytical description of diffusion transport of gaseous reactive species, coupled with quasi-equilibrium het

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::00fa2f127467d9be7b8533c022936998
https://doi.org/10.1016/s0022-0248(99)00418-2

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Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere

Autor: E. N. Mokhov, D. V. Zimina, Yu. A. Vodakov, M.G. Ramm, Alexandr Dmitrievich Roenkov, S. Yu. Karpov, Yu.N. Makarov

Publikováno v: physica status solidi (a). 176:435-438

The growth of AlN crystals by sublimation technique is investigated. Two mechanisms of Al and N2 transport from the source to the seed are distinguished — occurring predominantly via diffusion or via drift of the reactive species. Drift transport p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cc58fefa05fe298279036ff8bfda51f5
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<435::aid-pssa435>3.0.co

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