Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Yu. A. Arbuzov"'
Autor:
Yu. D. Arbuzov
Publikováno v:
Applied Solar Energy. 57:536-540
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fe379e618a678bc5c04e4562c526664
https://doi.org/10.3103/s0003701x21060037
https://doi.org/10.3103/s0003701x21060037
Publikováno v:
Alternative Energy and Ecology (ISJAEE). :76-81
The paper deals with the study of high-voltage matrix solar modules. The high-voltage solar module with two-sided working surface is in the form of a matrix of switched miniature solar cells, in which one or two linear dimensions are comparable with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c67ea1e3848fe24f1f90aeecd0d410f
https://doi.org/10.15518/isjaee.2015.19.010
https://doi.org/10.15518/isjaee.2015.19.010
Publikováno v:
Instruments and Experimental Techniques. 56:444-448
A method for measuring the internal photoeffect quantum yield in various semiconductors is described. It is based on the fact that the dependence of the charge-carrier separation coefficient at a p-n junction on the wavelength of incident radiation i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18032f6f64356da82504f3a954491ee1
https://doi.org/10.1134/s0020441213040015
https://doi.org/10.1134/s0020441213040015
Publikováno v:
Applied Solar Energy. 47:263-270
A homogeneous planar photoconverter (PC) of a new type based on a multi-junction n-p-p+-n-p-p+-...-n-p-p+ semiconductor structure was proposed. This semiconductor structure is a cascade PC consisting of several exposed PCs connected in series, with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbb5f701e062540cd6566d0a62e59a6c
https://doi.org/10.3103/s0003701x11040037
https://doi.org/10.3103/s0003701x11040037
Publikováno v:
N.N. Priorov Journal of Traumatology and Orthopedics. 5:3-9
The report deals with the treatment of gunshot femur fractures. Brief historical review of curative methods for that type of military pathology is presented. Authors give their experience in management of 150 patients with gunshot femur fractures: st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e1b08b236c183a21cc2b8cdfabfd291
https://doi.org/10.17816/vto104532
https://doi.org/10.17816/vto104532
Autor:
Yu. D. Arbuzov, M. Yu. Kolenkin
Publikováno v:
physica status solidi (b). 138:547-551
The imaginary part of the interband dielectric function ϵ2(ω) of disordered semiconductors is calculated in the case of a Gaussian random field. The corrections to the semiclassical expression for ϵ2(ω) are obtained. The limits of validity of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b03e945049fed4a36aaf8d12138a124
https://doi.org/10.1002/pssb.2221380219
https://doi.org/10.1002/pssb.2221380219
Autor:
M. Yu. Kolenkin, Yu. D. Arbuzov
Publikováno v:
Soviet Physics Journal. 30:484-488
The analytical properties of the mean two-particle density matrixZ(t)=∫dR1 ∫dR2 in the right-hand halfplane of the complex variable t is considered; hereρc,v(R1,R2; t) are single-particle density matrices. It is proven that, in the case of a Gau
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39aa3142ce909e891cdcf3d33b98cd42
https://doi.org/10.1007/bf00897336
https://doi.org/10.1007/bf00897336
Autor:
V. M. Evdokimov, Yu. D. Arbuzov
Publikováno v:
Physica Status Solidi (b). 92:579-583
It is shown that the static conductivity of a heavily doped semiconductor may be obtained in terms of a transport relaxation time. Not only the term of Born's approximation is regained in the framework of the assumptions made but as well the terms as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4009e1e4baa60f5a6934f69d0086f558
https://doi.org/10.1002/pssb.2220920230
https://doi.org/10.1002/pssb.2220920230
Publikováno v:
Soviet Physics Journal. 31:25-29
A method is proposed for the formulation of an asymptotic series for the light absorption coefficient in disordered semiconductors with a random field of the Coulomb type. It is shown that the series is obtained by expanding the exponent of an expone
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cb94d160ad076b0a7df5e0de3349921
https://doi.org/10.1007/bf00896681
https://doi.org/10.1007/bf00896681
Publikováno v:
Bulletin of the Academy of Sciences of the USSR Division of Chemical Science. 1:539-542
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aad1fe5d3450c6f2fc8916586b9aed00
https://doi.org/10.1007/bf01172011
https://doi.org/10.1007/bf01172011