Zobrazeno 1 - 1
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pro vyhledávání: '"Yu.А. Kabalnov"'
Publikováno v:
Electronic engineering Series 2 Semiconductor devices. 258:34-42
In this paper the new design of lateral bipolar transistors is presented, made on the basis of the charge carrier transport modeling. New design provides high level of base current transmission coefficient and enhanced radiation resistance. The manuf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30ff4b4f7b7cad37d8886293089624df
https://doi.org/10.36845/2073-8250-2020-258-3-34-42
https://doi.org/10.36845/2073-8250-2020-258-3-34-42
