Zobrazeno 1 - 10
of 103
pro vyhledávání: '"Yu-Shyan Lin"'
Autor:
Yu-Shyan Lin, Chi-Che Lu
Publikováno v:
Micromachines, Vol 14, Iss 6, p 1183 (2023)
This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO2 is used to form the dielectric and passivation layers. The TiO2 film is characterized using X-ray photoemission spectroscopy (XPS)
Externí odkaz:
https://doaj.org/article/338b59f5ed5a4cdea8aef52fe8116680
Autor:
Yu-Shyan Lin, Shin-Fu Lin
Publikováno v:
Micromachines, Vol 12, Iss 1, p 7 (2020)
This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation la
Externí odkaz:
https://doaj.org/article/d3bfb5b5efd742d18301350bd08ddd0d
Autor:
Yu-Shyan Lin, 林育賢
88
In this thesis, the properties of In0.5(AlXGa1-X)0.5P/GaAs and In0.34Al0.66As0.85Sb0.15/InP and their important contributions to the field of electronic devices have been proposed, including single and double heterostructure-emitter bipolar t
In this thesis, the properties of In0.5(AlXGa1-X)0.5P/GaAs and In0.34Al0.66As0.85Sb0.15/InP and their important contributions to the field of electronic devices have been proposed, including single and double heterostructure-emitter bipolar t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/75117055138396527448
Autor:
Yu-Shyan Lin, 林育賢
84
In this thesis, we have successfully fabricated a novel InAlAs/InGaAs two- terminal real-space transfer diode (RSTD) low-pressure metalorganic by chemical vapor deposition for the first time. In the conventional real-space transfer, the peak-
In this thesis, we have successfully fabricated a novel InAlAs/InGaAs two- terminal real-space transfer diode (RSTD) low-pressure metalorganic by chemical vapor deposition for the first time. In the conventional real-space transfer, the peak-
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/03156898747773488647
Autor:
Yu-Shyan Lin, Heng-Wei Wang
Publikováno v:
Science of Advanced Materials. 14:1419-1422
An AlGaN/AlN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMT) with an Al2O3 insulator is studied. The post-deposition annealing (PDA) of Al2O3 is conducted. The effects of PDA in an N2 atmosphere on the performance of the M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8edd25a52bf322dc5f0d4508e330e267
https://doi.org/10.1166/sam.2022.4343
https://doi.org/10.1166/sam.2022.4343
Autor:
Lu, Yu-Shyan Lin, Chi-Che
Publikováno v:
Micromachines; Volume 14; Issue 6; Pages: 1183
This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO2 is used to form the dielectric and passivation layers. The TiO2 film is characterized using X-ray photoemission spectroscopy (XPS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::4f51643a7917392f03d7ce17ed4eb370
Autor:
Jian-Jhang Huang, Yu-Shyan Lin
Publikováno v:
Journal of the Korean Physical Society. 79:828-831
AlGaAs/InGaAs high-electron mobility transistors (HEMTs) are fabricated using a developed highly selective process and then characterized. The AlGaAs/InGaAs HEMTs undergo (NH4)2Sx treatment prior to gate metal deposition. The experimental results dem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b4a08cbe1379e7fecea21a2741f3e3d
https://doi.org/10.1007/s40042-021-00299-5
https://doi.org/10.1007/s40042-021-00299-5
Autor:
Chun-Cheng Lin, Yu-Shyan Lin
Publikováno v:
Science of Advanced Materials. 13:638-641
AlGaAs/InGaAs high-electron mobility transistors (HEMTs) are grown by molecular beam epitaxy (MBE). The studied HEMTs use two AlAs layers as etch-stop layers in the selective-etch recessed-gate fabrication of the HEMTs. The influence of passivation u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99e47c27fdd39eca56783a022d023fa0
https://doi.org/10.1166/sam.2021.3928
https://doi.org/10.1166/sam.2021.3928
Autor:
Yu-Shyan Lin, Shin-Fu Lin
Publikováno v:
Micromachines, Vol 12, Iss 7, p 7 (2021)
Micromachines
Volume 12
Issue 1
Micromachines
Volume 12
Issue 1
This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b1d636c89a0d04fd00abd9b7c46ac85
https://www.mdpi.com/2072-666X/12/1/7
https://www.mdpi.com/2072-666X/12/1/7
Autor:
Yu-Shyan Lin, Bo-Yuan Chen
Publikováno v:
Microelectronic Engineering. 214:100-103
The effects of surface passivation on AlGaAs/InGaAs/GaAs HEMTs using silicon nitride are presented. The passivated HEMT exhibited stable operation at elevated temperatures up to 480 K with excellent pinch-off characteristics. Furthermore, the interes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::085bec30035ed6d2f3789d982227a7b3
https://doi.org/10.1016/j.mee.2019.04.028
https://doi.org/10.1016/j.mee.2019.04.028