Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Yu-Shien Shiah"'
Autor:
Junghwan Kim, Yu‐Shien Shiah, Kihyung Sim, Soshi Iimura, Katsumi Abe, Masatake Tsuji, Masato Sasase, Hideo Hosono
Publikováno v:
Advanced Science, Vol 9, Iss 5, Pp n/a-n/a (2022)
Abstract Metal halide perovskites (MHPs) are plausible candidates for practical p‐type semiconductors. However, in thin film transistor (TFT) applications, both 2D PEA2SnI4 and 3D FASnI3 MHPs have different drawbacks. In 2D MHP, the TFT mobility is
Externí odkaz:
https://doaj.org/article/9f32378530f24453aa23a2b5504e1fc3
Publikováno v:
Polymers, Vol 13, Iss 22, p 3941 (2021)
In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the op
Externí odkaz:
https://doaj.org/article/72d04d226c5644a19ce9e10102b5d420
Autor:
Yu-Shien Shiah, 夏佑賢
105
Amorphous oxide semiconductors (AOSs) represented by amorphous indium-gallium-zinc oxide (a-IGZO) are considered to be the most competitive materials in display industry for its great uniformity over large size display, low fabrication tempe
Amorphous oxide semiconductors (AOSs) represented by amorphous indium-gallium-zinc oxide (a-IGZO) are considered to be the most competitive materials in display industry for its great uniformity over large size display, low fabrication tempe
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/54tr2p
Autor:
Yu-Shien Shiah, Hideo Hosono, Yuhao Shi, Shigenori Ueda, Junghwan Kim, Katsumi Abe, Masato Sasase, Kihyung Sim
Publikováno v:
Nature Electronics. 4:800-807
Thin-film transistors based on amorphous oxide semiconductors could be used to create low-cost backplane technology for large flat-panel displays. However, a trade-off between mobility and stability has limited the ability of such devices to replace
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4264dc9bcd220dffea962b22f944852f
https://doi.org/10.1038/s41928-021-00671-0
https://doi.org/10.1038/s41928-021-00671-0
Autor:
Cheol Hee Choi, Junghwan Kim, Hideo Hosono, Shigenori Ueda, Taikyu Kim, Yu Shien Shiah, Jae Kyeong Jeong
Publikováno v:
ACS Applied Materials & Interfaces. 13:28451-28461
In this work, high-performance amorphous In0.75Ga0.23Sn0.02O (a-IGTO) transistors with an atomic layer-deposited Al2O3 dielectric layer were fabricated at a maximum processing temperature of 150 °C. Hydrogen (H) and excess oxygen (Oi) in the Al2O3 f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::887f67fba629ce50b9c8d457e3b0db95
https://doi.org/10.1021/acsami.1c04210
https://doi.org/10.1021/acsami.1c04210
Publikováno v:
Journal of the American Chemical Society. 143:7042-7049
The charge, spin, and composition degrees of freedom in high-entropy alloy endow it with tunable valence and spin states, infinite combinations and excellent mechanical performance. Meanwhile, the stacking, interlayer, and angle degrees of freedom in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a198825d79f70400eb6729e97c99f102
https://doi.org/10.1021/jacs.1c01580
https://doi.org/10.1021/jacs.1c01580
Publikováno v:
Proceedings of the International Display Workshops. :124
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3008a4d75df29e9ced340f0a6338e49a
https://doi.org/10.36463/idw.2022.0124
https://doi.org/10.36463/idw.2022.0124
Publikováno v:
Polymers, Vol 13, Iss 3941, p 3941 (2021)
Polymers
Volume 13
Issue 22
Polymers
Volume 13
Issue 22
In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59d1f7ad2d2a11763d440cb5fa5494b6
https://www.mdpi.com/2073-4360/13/22/3941
https://www.mdpi.com/2073-4360/13/22/3941
Publikováno v:
Applied Physics Letters. 121:212101
Maintaining gate bias stability under negative bias stress (NBS) and positive bias stress (PBS) is a long-standing issue in amorphous oxide semiconductor thin-film transistors (TFTs). The passivation of the channel layer is crucial for improving devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbead2d062e6cc288a820f914a1c4035
https://doi.org/10.1063/5.0123253
https://doi.org/10.1063/5.0123253
Autor:
Xiuhua Cao, Junbiao Peng, Kuankuan Lu, Xianzhe Liu, Yu-Shien Shiah, Wei Xu, Rihui Yao, Jianhua Zhang, Junghwan Kim, Honglong Ning
Publikováno v:
Advanced Materials Interfaces. :2002193
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef7a8755c8a93ec0dcd43469b69a64b4
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100845004
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100845004