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pro vyhledávání: '"Yu-Lun Jiang"'
Autor:
Wei-Sheng Liu, Balaji Gururajan, Sui-Hua Wu, Li-Cheng Huang, Chung-Kai Chi, Yu-Lun Jiang, Hsing-Chun Kuo
Publikováno v:
Micromachines, Vol 13, Iss 9, p 1546 (2022)
Aluminum nitride (AlN) thin-film materials possess a wide energy gap; thus, they are suitable for use in various optoelectronic devices. In this study, AlN thin films were deposited using radio frequency magnetron sputtering with an Al sputtering tar
Externí odkaz:
https://doaj.org/article/e2267f11886a4dffb746dfb46a31c328
