Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yu-Lin Jhou"'
Publikováno v:
GCCE
A heterojunction-Schottky diode has a low forward-voltage drop and a fast switching feature. Therefore, in this paper, the drain side heavily doped region was removed and equivalently added a heterojunction device in 60 V n/pLDMOS devices, and evalua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc1fdcac4d2fb74771b991b9fec106c
https://doi.org/10.1109/gcce46687.2019.9015497
https://doi.org/10.1109/gcce46687.2019.9015497
Publikováno v:
GCCE
In this work, the effect of different drift region lengths on the ESD ability in ultra-high voltage LDMOS is proposed and verified via a 0.5 μm 300 V process. By the different drift-region lengths, the corresponding breakdown voltage can result in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e547d9249e79dddb9a71553c8ce403fd
https://doi.org/10.1109/gcce46687.2019.9015277
https://doi.org/10.1109/gcce46687.2019.9015277
ESD-Reliability Investigation 1of an UHV Elliptical LDMOS-SCR by the Drain-Side Junction Replacement
Publikováno v:
ICCE-TW
In this paper, 300 V elliptical nLDMOS DUTs are used as the experimental reference group, and then an architecture of drain side SCR HVNW/HVN-Epi replacement is taken for studying the impact of the HVNW/HVN-Epi engineering on the ESD capability. Even
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a038e631cbe074be1a67d658f9c201da
https://doi.org/10.1109/icce-tw46550.2019.8991941
https://doi.org/10.1109/icce-tw46550.2019.8991941
Publikováno v:
ICCE-TW
In this paper, the channel length and drift region's STI length modulations have been realized by a TSMC 0.25- $\mu\mathrm{m}$ 60-V high voltage n-LDMOS process to evaluate its ability of ESD improvement. It can found that both the modulations of cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb85c3a0f9829eb9ad332c82545d3c7c
https://doi.org/10.1109/icce-tw46550.2019.8991809
https://doi.org/10.1109/icce-tw46550.2019.8991809
Publikováno v:
2018 IEEE International Conference on Advanced Manufacturing (ICAM).
In this paper, the area effect of floating polysilicons above the drain-side STI on ESD robustness of high voltage components is studied by 0.25-μm 60-V p-channel LDMOS devices. In general, near the gate and drain-side STI regions have high lateral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32fe11c466d25fb71f8b1b9b752bb705
https://doi.org/10.1109/amcon.2018.8614847
https://doi.org/10.1109/amcon.2018.8614847
Publikováno v:
2018 Asia-Pacific Microwave Conference (APMC).
For the high-voltage 60-V square type pLDMOS, a parasitic SCR np arrangement was added into the outer guard-ring zone and modulated the STI width to investigate the impact of the ESD protection immunity. There are five kinds of STI width such as 15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50ebbc414cd770590d2f7b16265fdde3
https://doi.org/10.23919/apmc.2018.8617496
https://doi.org/10.23919/apmc.2018.8617496
Publikováno v:
2018 IEEE International Conference on Advanced Manufacturing (ICAM).
In this paper, 300 V circular nLDMOS DUTs is used as the experimental benchmark group, and a smart architecture of HVPW is added into the HVNW drift-region to form a super-junction (SJ) structure (radial-type SJ). And then, for the HVPW/HVNW area mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aa90b3be5e4bb873e59039174c6ba94
https://doi.org/10.1109/amcon.2018.8614954
https://doi.org/10.1109/amcon.2018.8614954
Autor:
Yu-Lin Jhou, Jen-Hao Lo, Yu-Lin Lin, Yi-Hao Chiu, Pei-Lin Wu, Chih-Hung Yang, Shen-Li Chen, Chun-Ting Kuo, Yi-Hao Chao
Publikováno v:
2018 IEEE International Conference on Consumer Electronics-Taiwan (ICCE-TW).
The traditional p-channel LDMOS is often used as a electrostatic discharge self-protection components in high voltage circuit input/output pads. Nevertheless, it has one serious shortcoming that is the poor conductivity of pLDMOS leads to a very low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141beba44226b79e2ff027afef0d0fae
https://doi.org/10.1109/icce-china.2018.8448414
https://doi.org/10.1109/icce-china.2018.8448414
Autor:
Chih-Ying Yen, Chun-Ting Kuo, Shen-Li Chen, Yi-Hao Chao, Yu-Lin Lin, Yu-Lin Jhou, Jen-Hao Lo, Yi-Hao Chiu, Pei-Lin Wu
Publikováno v:
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia).
In this paper, parasitic silicon controlled rectifiers (SCRs) in both the drift and drain regions of 0.5-μm 300-V circular ultra-high-voltage n-channel laterally-diffused MOSFETs (UHV-nLDMOSs) were modulated to improve the resistance of the LDMOSs t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::788d438cee87f7b6bfe78d89eed47608
https://doi.org/10.23919/ipec.2018.8507872
https://doi.org/10.23919/ipec.2018.8507872
Autor:
Yi-Hao Chao, Yi-Hao Chiu, Pei-Lin Wu, Chun-Ting Kuo, Yu-Lin Lin, Yu-Lin Jhou, Jen-Hao Lo, Shen-Li Chen, Yi-Cih Wu
Publikováno v:
2018 7th International Symposium on Next Generation Electronics (ISNE).
Discrete modulation was applied to a 60 V nLDMOS drain-side inserted SCR npn-arranged type and pnp-arranged type to investigate the devices' electrostatic discharge (ESD) protection ability. When applying SCR npn-arranged type discrete-anode modulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb1909b8ab5404852857426af6ab42fe
https://doi.org/10.1109/isne.2018.8394683
https://doi.org/10.1109/isne.2018.8394683