Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Yu-Li Hsieh"'
Autor:
Mukta Sharma, Chia-Lung Tsai, Ying-Chang Li, Cheng-Chia Lee, Yu-Li Hsieh, Chih-Hsiang Chang, Shao-Wei Chen, Liann-Be Chang
Publikováno v:
Renal Failure, Vol 46, Iss 2 (2024)
Background The successful treatment and improvement of acute kidney injury (AKI) depend on early-stage diagnosis. However, no study has differentiated between the three stages of AKI and non-AKI patients following heart surgery. This study will fill
Externí odkaz:
https://doaj.org/article/5d05eaa3cb7143e68f2f0a54a00f81bd
Publikováno v:
Crystals, Vol 10, Iss 4, p 292 (2020)
The AlGaN/GaN materials with a wide band gap, high electron mobility, and high breakdown voltage are suitable for manufacturing high-power and high-frequency electronic devices. In this study, metal Schottky contact electrodes of different dimensions
Externí odkaz:
https://doaj.org/article/01f2f5be6500423ea755352462f6e752
Autor:
Yu-Li Hsieh, Wen-Shao Chen, Liann-Be Chang, Lee Chow, Samuel Borges, Alfons Schulte, Shiang-Fu Huang, Ming-Jer Jeng, Chih-Jen Yu
Publikováno v:
Crystals, Vol 9, Iss 3, p 176 (2019)
Gallium nitride (GaN) materials with a high chemical stability and biocompatibility are well suited for bio-sensing applications and evanescent wave spectroscopy. However, GaN poses challenges for processing, especially for deep etching using convent
Externí odkaz:
https://doaj.org/article/a5057b2384384bc9803b96cb90ebc6dc
Publikováno v:
Journal of Electronic Materials. 49:6798-6805
A GaN-based metal–semiconductor–metal varactor with a two-dimensional electron gas (2DEG) layer is proposed and fabricated. The capacitance variation of this fabricated varactor biased at different external voltages is studied and measured, and t
Publikováno v:
Microelectronics Reliability. 142:114905
Autor:
Samuel Borges, Ming-Jer Jeng, Alfons Schulte, Shiang-Fu Huang, Liann-Be Chang, Lee Chow, Chih-Jen Yu, Wen-Shao Chen, Yu-Li Hsieh
Publikováno v:
Crystals, Vol 9, Iss 3, p 176 (2019)
Crystals
Volume 9
Issue 3
Crystals
Volume 9
Issue 3
Gallium nitride (GaN) materials with a high chemical stability and biocompatibility are well suited for bio-sensing applications and evanescent wave spectroscopy. However, GaN poses challenges for processing, especially for deep etching using convent
Autor:
Liann-Be Chang, Hao-Zong Lo, Zi-Xin Ding, Hung-Tsung Wang, Yuan-Po Chiang, Chien-Fu Shih, Yu-Li Hsieh, Chia-Ning Chang, Chung-Yi Li, Ming-Jer Jeng
Publikováno v:
Materials, Vol 13, Iss 4956, p 4956 (2020)
Materials
Volume 13
Issue 21
Materials
Volume 13
Issue 21
Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection modu
Publikováno v:
Crystals, Vol 10, Iss 292, p 292 (2020)
Crystals
Volume 10
Issue 4
Crystals
Volume 10
Issue 4
The AlGaN/GaN materials with a wide band gap, high electron mobility, and high breakdown voltage are suitable for manufacturing high-power and high-frequency electronic devices. In this study, metal Schottky contact electrodes of different dimensions
Publikováno v:
International Journal of Information Management. 34:474-488
Cloud computing is a new information technology (IT) paradigm that promises to revolutionize traditional IT delivery through reduced costs, greater elasticity, and ubiquitous access. On the surface, adopting cloud computing requires a firm to address
Autor:
Yu Li Hsieh, Bernel Spencer, Barbara L. Dancy, Kathleen S. Crittenden, Arlisha Kennedy, Daniell Ashford
Publikováno v:
Journal of HIV/AIDS & Social Services. 8:292-307
African American adolescent females continue to be at disproportionate high risk for HIV infection. A repeated measures quasi-experimental comparison group design compared an HIV risk-reduction intervention delivered by mothers with an HIV risk-reduc