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Autor:
Tseng Chien-Hsien, Shou-Gwo Wuu, Ho-Ching Chien, Dun-Nian Yaung, C.S. Wang, Yu-Kung Hsaio, Chin-Kung Chang
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
A high performance 0.18 um CMOS image sensor technology has been successfully developed and fully characterized. 3T active pixel sensor (APS) with non-silicide source/drain process is provided to reduce dark current and increase photoresponse. By opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e63badb44d32320ab3b5fdddb736db85
https://doi.org/10.1109/iedm.2001.979567
https://doi.org/10.1109/iedm.2001.979567
