Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Yu-Jung Liao"'
Publikováno v:
IEEE Electron Device Letters. 43:678-681
Autor:
Chia-Juan Tsai, Sung-Ching Chi, Rui-Sheng Chen, Jian-Jia Tseng, Chun-Kai Tseng, Yu-Jung Liao, Ya Yuan Yang, Hsin-Chia Yang
Publikováno v:
2019 8th International Conference on Innovation, Communication and Engineering (ICICE).
Electrical performances, closely associated with dimensional structures and various processing conditions, are mainly manifested by I-V curves (Drain current (I DS ) versus Drain bias (V DS ) or Gate bias (V GS )). FinFET transistors use fin-structur
Autor:
Hsin-Chia Yang, Sung-Ching Chi, Rui-Sheng Chen, Chun-Kai Tseng, Jian-Jia Tseng, Chia-Juan Tsai, Yu-Jung Liao, Ya Yuan Yang
Publikováno v:
2019 8th International Conference on Innovation, Communication and Engineering (ICICE).
Higher temperatures always help generate a lot more phonons, blocking carriers from moving around and thus causing degradations of electrical performances. A FinFET transistor with channel length L=0.090 microns and fin width W=0.120 microns are anal
Autor:
Kun-Hong Liao, Chun-Yian Chang, Hsiu-Hsien Yu, Hsin-Chia Yang, Sung-Ching Chi, Yu-Jung Liao, Kuo-Chin Lo
Publikováno v:
ICKII
Insulated Gate Bipolar Transistor (IGBT) uniquely enjoys comparably high power due to high current gain, which utilizes various routes for gated-controlled currents to flow, especially on Bipolar-like currents. Therefore input impedance is expected t
Autor:
Hsiu-Hsien Yu, Hsin-Chia Yang, Chun Yian Chang, Kai-Hung Hsieh, Yu-Jung Liao, Kun-Hong Liao, Sung-Ching Chi
Publikováno v:
ICKII
An alternative algorithm is drawn in to fit the electrical characteristic curves, including Drain current versus Drain voltage and Drain current versus Gate voltage, on NFinFET devices. Devices are fabricated on SOI (silicon on insulator) wafers to p
Publikováno v:
Engineering Innovation and Design ISBN: 9780429019777
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e34eb8588af6f7261515b945d76f8a4f
https://doi.org/10.1201/9780429019777-22
https://doi.org/10.1201/9780429019777-22
Publikováno v:
2017 6th International Symposium on Next Generation Electronics (ISNE).
Fixing the doping dosage in V T implant process, as the doping energy is lower; contributing the good p-n junction controllability, the punch-through voltage (V PT ) at 6keV doping energy is greater than that at 10keV, no matter what the long-channel
Publikováno v:
Applied Organometallic Chemistry. 17:952-957
The 7-allyl- and 7-(2-methylvinyl)-functionalized derivatives of 8-hydroquinoline are synthesized by Claisen rearrangement and double bond rearrangement respectively. Then 7-allyl-8-hydroquinoline (C) and 7-(2-methylvinyl)-8-hydroquinoline (D) are re
Publikováno v:
Journal of nanoscience and nanotechnology. 11(10)
Nanometer-sized Pt, Rh, and bimetallic Pt-Rh particles can be deposited on surface of phenylacetic acid functionalized single-walled carbon nanotubes (SWCNTs) by a microemulsion method. The SWCNT-supported metallic nanoparticles show much greater cat