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pro vyhledávání: '"Yu-Husien Lin"'
Autor:
Yu-Ru Lin, Yi-Yun Yang, Yu-Husien Lin, Erry Dwi Kurniawan, Mu-Shih Yeh, Lun-Chun Chen, Yug-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1187-1191 (2018)
This comprehensive study of the horizontally p-type stacked nanosheets inversion mode thinfilm transistor with gate-all-around (SNS-GAATFT) and multi-gate (SNS-TFT) structures. The stacked nanosheets device structure, fabrication, and electrical char
Externí odkaz:
https://doaj.org/article/71a2d47776ec47248171195c9720135f