Zobrazeno 1 - 10 of 28 pro vyhledávání: '"Yu-Feng Jin"'
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Akademický článek
Novel Double Endobutton Technique Combined with Three‐Dimensional Printing: A Biomechanical Study of Reconstruction in Acromioclavicular Joint Dislocation
Autor: Lei Zhang, Ai‐ni He, Yu‐feng Jin, Han‐wen Cheng, Lin Yu, Hua‐qiang Zhang, Jun‐jie Yao, Xin Zhou
Publikováno v: Orthopaedic Surgery, Vol 12, Iss 5, Pp 1511-1519 (2020)
Objective To reconstruct the acromioclavicular (AC) joint using an adjusted closed‐loop double Endobutton technique via a guiding locator that was applied using three‐dimensional (3D) printing technology. At the same time, the reliability and saf
Externí odkaz: https://doaj.org/article/741c80a3b024427a824397777fc6fd40
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4
Novel Double Endobutton Technique Combined with Three‐Dimensional Printing: A Biomechanical Study of Reconstruction in Acromioclavicular Joint Dislocation
Autor: Xin Zhou, Jun‐jie Yao, Yu‐feng Jin, Hua‐qiang Zhang, Han‐wen Cheng, Lin Yu, Lei Zhang, Ai‐ni He
Publikováno v: Orthopaedic Surgery, Vol 12, Iss 5, Pp 1511-1519 (2020)
Orthopaedic Surgery
Objective To reconstruct the acromioclavicular (AC) joint using an adjusted closed‐loop double Endobutton technique via a guiding locator that was applied using three‐dimensional (3D) printing technology. At the same time, the reliability and saf
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7dfc54e2fd8fec2dd327436cb9f09a1e
https://doi.org/10.1111/os.12770
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5
Accurate Location of Bone Tunnel in Reconstruction of Coracoclavicular Ligament Based on Three-Dimensional Printing Navigation Module Technology: Virtual Model Vs. Real Model
Autor: Guo-You Wang, Si-Yuan He, Gang Yi, Lu-Jing Xiong, Xin Zhou, Yu‐feng Jin, Lei Zhang
Background: Reconstruction of coracoclavicular (CC) ligament has become a fundamental surgical method for acromioclavicular (AC) joint dislocation. Finding accurate location of bone tunnel is a key step in reconstruction of CC ligament. This study ai
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cd09817cf4b67e26657dc1cbbef6a53d
https://doi.org/10.21203/rs.3.rs-65488/v1
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7
The Nano Tungsten Thin Film and its Contacting Property with Aluminium Electrodes
Autor: Jin Wen Zhang, Yu Feng Jin, Wei Liang
Publikováno v: Advanced Materials Research. 1082:455-458
In this paper we report nanothickness tungsten (W) thin films with nanoscale thickness prepared by DC magnetron sputtering. Three kinds of samples were realized using micromachining technology, including two-wire and four-wire terminal configurations
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb0884c19b0ab0012faf7c5d2bfcc0b8
https://doi.org/10.4028/www.scientific.net/amr.1082.455
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8
Bilateral PIN Diode for Fast Neutron Dose Measurement
Autor: Chen Liu, C. Z. Zhou, Miao Yu, C. Fan, Lin Qi, An qi Hu, Baohua Shi, Yu Feng Jin, Jiuju Wang, Shao nan Wang
Publikováno v: IEEE Transactions on Nuclear Science. 61:1311-1315
A silicon-based bilateral diode for fast neutron dose measurement is presented to take advantage of vertical and lateral current distributions and to achieve high uniform current distribution. The structure is designed to place rectangle ${\bf p +}$
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::be71c65be4ca822d146cecaed498f41e
https://doi.org/10.1109/tns.2014.2317757
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9
TMAH Etching of Silicon Wafer for Detector Fabrication
Autor: Hong Zhi Liu, Jinyan Wang, Min Yu, Shao nan Wang, Bao hua Shi, Lin Qi, Yu Feng Jin, Hong Du, An qi Hu
Publikováno v: Advanced Materials Research. 901:15-20
Anisotropic wet etching of high resistivity silicon by TMAH for the fabrication of large area silicon radiation detectors is studied in this work. TMAH is widely applied in microelectronics and micromechanical fabrication etching low resistivity sili
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb2020299a41d91acf672c0da323c3e3
https://doi.org/10.4028/www.scientific.net/amr.901.15
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10
Phonon Modes in AlGaN Alloy with AlGaN/GaN MQW Interlayer
Autor: Yu Feng Jin, Zhi Jian Yang, Jin Zhou, En Guang Dai, Bo Shen
Publikováno v: Advanced Materials Research. 214:526-530
500nm AlGaN thick layer with AlGaN/GaN MQW interlayer was grown on sapphire substrate for UV detector and resonant tunneling diodes by MOCVD equipment. We were strongly interesting in the stress information of QW. There are a big mismatch of lattice
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::129e4356a2c700cc3ca2966d883b65b3
https://doi.org/10.4028/www.scientific.net/amr.214.526
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