Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Yu-Cian Wang"'
Autor:
Yu-cian Wang, 王榆茜
104
One-dimensional transparent conductive oxide nanomaterial is considered one of the key materials of flexible electronics products in future. Currently, the low temperature preparation process for oxide nanowire has the disadvantage of low gr
One-dimensional transparent conductive oxide nanomaterial is considered one of the key materials of flexible electronics products in future. Currently, the low temperature preparation process for oxide nanowire has the disadvantage of low gr
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/97a9dc
Autor:
Yu-cian Wang, 王榆茜
99
Due to its high mobility and high stability under light soaking, polycrystalline silicon (Poly-Si) is a promising material candidate for thin film solar cells and transistors. Solid phase crystallization (SPC) of hydrogenated amorphous silico
Due to its high mobility and high stability under light soaking, polycrystalline silicon (Poly-Si) is a promising material candidate for thin film solar cells and transistors. Solid phase crystallization (SPC) of hydrogenated amorphous silico
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/41859909614678173957
Autor:
YU-CIAN WANG, 王郁茜
99
Two people walk randomly in a complete graph with n equal-distanced vertices. We want to find the distribution of the first meeting time under two different definitions of meeting. The first is that meeting occurs only at vertices, and the se
Two people walk randomly in a complete graph with n equal-distanced vertices. We want to find the distribution of the first meeting time under two different definitions of meeting. The first is that meeting occurs only at vertices, and the se
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/98045519271517623991
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc89bc2d1afa8390ea47f465539278b0
https://doi.org/10.7567/ssdm.2020.f-10-01
https://doi.org/10.7567/ssdm.2020.f-10-01
Autor:
Yu-Cian Wang, Nobuaki Kojima, Akio Yamamoto, Yoshio Ohshita, Kei Kawakatsu, Masafumi Yamaguchi
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
Double layers of In 2 Se 3 and GaAs were grown on Si(111) 4o off substrate by molecular beam epitaxy (MBE). After the MBE growth, the GaAs layer transfer onto flexible PMMA sheet was attempted by the mechanical cleavage by hand or by the thermal stre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5670250c0310b24bdec366e67f6e2cd8
https://doi.org/10.1109/pvsc40753.2019.8980751
https://doi.org/10.1109/pvsc40753.2019.8980751
Autor:
Nobuaki Kojima, Kei Kawakatsu, Masafumi Yamaguchi, Yu-Cian Wang, Yoshio Ohshita, Akio Yamamoto
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
In this study, the crystalline improvement of GaAs grown on metal (Ga or In) selenides films is studied. We have found that the inevitable bonding between Ga and Se on the top of In 2 Se 3 was observed. Further, the wettability of GaAs nucleus has be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c31005c3bcc176ef5a7ed405d85fbd9e
https://doi.org/10.1109/pvsc40753.2019.8980873
https://doi.org/10.1109/pvsc40753.2019.8980873
Publikováno v:
Japanese Journal of Applied Physics. 60:SBBF14
Si tandem solar cells are attractive for new applications such as photovoltaic-powered vehicles because of their high-efficiency and low-cost potential. In particular, III-V/Si tandem solar cells have higher efficiency potential compared to perovskit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9ce98a331ba3acfe7841ef9b7974b8
https://doi.org/10.35848/1347-4065/abde2b
https://doi.org/10.35848/1347-4065/abde2b
Publikováno v:
physica status solidi (a). 213:2259-2263
Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi-crystalline silicon (mc-Si) solar cells has been investigated. The low-temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::443a69d93400684f2ab0f1c78cf0eca8
https://doi.org/10.1002/pssa.201600005
https://doi.org/10.1002/pssa.201600005
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
GaAs were grown by the migration-enhanced epitaxy (MEE) method on vicinal (001) Si substrates oriented 4 ° off towards [110] at low temperature. Investigations of crystalline and optical properties of the grown GaAs/Si were carried out by the method
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93f5c8a80b58c74a6e98fdc81d253adb
https://doi.org/10.1109/pvsc.2018.8548036
https://doi.org/10.1109/pvsc.2018.8548036
Autor:
Nobuaki Kojima, Kan-Hua Lee, Kenii Araki, Yu-Cian Wang, Masafumi Yamaguchi, Kvotaro Nakamura, Yoshio Ohshita, Takefumi Kamioka
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Combining Si PV module technology with an efficient III- V CPVs top PV into a tandem device is an attractive approach to enhance the efficiency of PV modules. Here, a method called III- V/Si hybrid configurations for enhancing the Si module efficienc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c64926bc1165a429acb5068ea7ee649a
https://doi.org/10.1109/pvsc.2017.8366113
https://doi.org/10.1109/pvsc.2017.8366113