Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Yu-Ching Tsao"'
Autor:
Hong-Yi Tu, Ting-Chang Chang, Yu-Ching Tsao, Mao-Chou Tai, Yu-Zhe Zheng, Yu-Fa Tu, Chuan-Wei Kuo, Chia-Chuan Wu, Yu-Lin Tsai, Tsung-Ming Tsai, Chih-Chih Lin, Ya-Ting Chien
Publikováno v:
IEEE Electron Device Letters. 43:721-724
Autor:
Yun-Hsuan Lin, Jen-Wei Huang, Hong-Yi Tu, Pei-Yu Wu, Mao-Chou Tai, Yu-Ching Tsao, Yu-Shan Lin, Ya-Ting Chien, Ting-Chang Chang, Fong-Min Ciou, Hao-Xuan Zheng, Fu-Yuan Jin, Yu-Lin Tsai
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 21:320-323
In this work, three MISHEMT devices with different electric-field-dispersion layer (EDL) behave the same pristine electrical properties. EDL, which is low dielectric constant (low-k), can effectively disperse electric field, which enhances breakdown
Autor:
Jian-Jie Chen, Jen-Wei Huang, Ting-Chang Chang, Wen-Chi Wu, Yong-Ci Zhang, Chih-Chih Lin, Hsin-Chieh Li, Kuan-Ju Zhou, Chuan-Wei Kuo, Yu-Ching Tsao, Hong-Chih Chen, Tsung-Ming Tsai
Publikováno v:
IEEE Transactions on Electron Devices. 68:4431-4436
This study investigates an abnormal degradation induced in a moist environment. Although devices maintain optimal performance under bias stress operation in a vacuum, an abnormal hump is observed in capacitance–voltage ( ${C}$ – ${V}$ ) electrica
Autor:
Simon M. Sze, Yu-Chieh Chien, Ya-Ting Chien, Hong-Yi Tu, Jian-Jie Chen, Yu-Ching Tsao, Chuan-Wei Kuo, Yu-Lin Tsai, Tsung-Ming Tsai, Hong-Chih Chen, Ting-Chang Chang
Publikováno v:
IEEE Transactions on Electron Devices. 68:1654-1658
This work studies the effect of the location of the light shielding (LS) layer on negative bias illumination stress (NBIS) instability in self-aligned top-gate amorphous indium-gallium-zinc oxide thin-film transistors (SA-TG a-InGaZnO TFTs). Although
Publikováno v:
IEEE Transactions on Electromagnetic Compatibility. 63:66-73
An ultrawideband absorptive common-mode filter (A-CMF) with a newly developed defected ground structure (DGS) is proposed in this article. The DGS miniaturized to a subwavelength size is able to totally suppress the common-mode noise while maintainin
Autor:
Shin-Ping Huang, Po-Hsun Chen, Guan-Fu Chen, Ting-Chang Chang, Hui-Chun Huang, Wei-Chih Lai, Yang-Hao Hung, Jian-Jie Chen, Yu-Ching Tsao, An-Kuo Chu, Hong-Chih Chen, Kuan-Ju Zhou, Chuan-Wei Kuo
Publikováno v:
IEEE Electron Device Letters. 40:1941-1944
This study investigated the reliability of top-gate p-type organic thin-film transistors in vacuum under positive bias stress-induced and positive bias illumination stress-induced instability degradation. The manufacturing process suggested that side
Autor:
Yu-Zhe Zheng, Mao-Chou Tai, Yu-Lin Tsai, Hong-Yi Tu, Yu-Ching Tsao, Shin-Ping Huang, Yu-Xuan Wang, Tsung-Ming Tsai, Chia-Chuan Wu, Ting-Chang Chang, Hong-Chih Chen
Publikováno v:
IEEE Electron Device Letters. 40:1768-1771
This letter investigates degradation after negative bias temperature instability (NBTI) stress applied to LTPS TFTs with different polycrystalline-silicon grain sizes. The initial characteristics of the LTPS TFTs are similar regardless of grain size;
Autor:
Jian-Jie Chen, Yao-Chih Chuang, Shengdong Zhang, Wan-Ching Su, Ting-Chang Chang, Shin-Ping Huang, Hong-Chih Chen, Yu-Ching Tsao, Kuan-Ju Zhou, Chuan-Wei Kuo, Guan-Fu Chen, Ming-Chang Yu, Sung-Chun Lin
Publikováno v:
IEEE Electron Device Letters. 40:1752-1755
This study investigates short channel (length $ ) p-type organic thin-film transistor (OTFT) devices which exhibit off-state leakage in their ID–VG characteristics. This phenomenon is attributed to the fact that when a lower positive gate voltage i
Autor:
Yu-Zhe Zheng, Terry Tai-Jui Wang, Po-Hsun Chen, Yu-Ching Tsao, Hong-Chih Chen, Ann-Kuo Chu, Wei-Han Chen, Shin-Ping Huang, Yu-Xuan Wang, Yu-Hua Chung, Chia-Chuan Wu, Shengdong Zhang, Yu-Shan Shih, Yao-Kai Shih, Ting-Chang Chang
Publikováno v:
IEEE Transactions on Electron Devices. 66:4764-4767
We investigate the abnormal current-voltage (C-V) hump effect of p-type low-temperature polysilicon (LTPS) thin-film transistors (TFTs) which have undergone high current operations. Experimental results indicate localized electron trapping in the gat
Autor:
Yu-Zhe Zheng, Po-Hsun Chen, Ting-Chang Chang, Yu-Shan Shih, Yu-Ching Tsao, Shin-Ping Huang, Hong-Chih Chen, Yu-Xuan Wang, Wei-Chih Lai, Chia-Chuan Wu, Ann-Kuo Chu
Publikováno v:
IEEE Electron Device Letters. 40:1638-1641
This letter investigates variations in polycrystalline silicon thin film transistor (TFT) performance under illumination and negative bias temperature instability (NBTI) tests due to different dehydrogenation annealing temperatures during the fabrica