Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Yu-Chien Chiu"'
Autor:
Yu-Chien Chiu, 邱郁蒨
104
In this paper, we proposed a 38GHz compact and wideband circularly polarized patch antenna design with branch line coupler using InFO-WLP (Integrated Fan-Out Wafer-Level-Packaging) technology using vertically connection in InFO-WLP to miniat
In this paper, we proposed a 38GHz compact and wideband circularly polarized patch antenna design with branch line coupler using InFO-WLP (Integrated Fan-Out Wafer-Level-Packaging) technology using vertically connection in InFO-WLP to miniat
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/64592838218668329334
Autor:
Hsiao-Hsuan Hsu, Wu-Ching Chou, Chun-Hu Cheng, Chih Chieh Hsu, Chia Chi Fan, Yi Jia Shih, Hsuan Han Chen, Bing Yang Shih, Wan Hsin Chen, Yu Wen Hung, Chun-Yen Chang, Chien Liu, Yu-Chien Chiu, Ming Huei Lin
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:Q242-Q245
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e63422d0b22199ce508235fc36ac49d
https://doi.org/10.1149/2.0061812jss
https://doi.org/10.1149/2.0061812jss
Autor:
Chia-Chi Fan, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Yu-Chien Chiu, Yu-Pin Lan, Shiang-Shiou Yen, Chun-Yen Chang
Publikováno v:
IEEE Transactions on Electron Devices. 64:4200-4205
Achieving high latch-up immunity is critical for power-rail electrostatic discharge (ESD) clamp circuits in high-voltage (HV) integrated circuit products. To investigate how shunt resistance affects the transmission line pulsing current–voltage cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::436d3eddd83536890dc0b2e66bf7c865
https://doi.org/10.1109/ted.2017.2736511
https://doi.org/10.1109/ted.2017.2736511
Autor:
Po Chun Chen, Hsuan-Ling Kao, Guan-Lin Liou, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Ming-Huei Lin, Zhi-Wei Zheng, Yu-Chien Chiu
Publikováno v:
IEEE Transactions on Nanotechnology. 16:876-879
In this study, we demonstrated a p -type and n -type SnO TFTs on flexible polyimide substrate. The fabricated p -type SnO TFT showed a high $I_{\rm on}/ I_{\rm off}$ of $ \text{5.7}\, \times \,\text{10}^{5}$ and a high $\mu _{{\rm{FE}}}$ of ${\text{1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66a202a98f670bcb19bfb1a7b0da21b6
https://doi.org/10.1109/tnano.2017.2719946
https://doi.org/10.1109/tnano.2017.2719946
Publikováno v:
IEEE Transactions on Electron Devices. 64:3498-3501
In this brief, we reported a ferroelectric versatile memory with strained-gate engineering. The versatile memory with high-strain-gate showed a >40% improvement on ferroelectric hysteresis window, compared to low-strain case. The high compressive str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b4d4cb46c8201766f8d095b74432d44
https://doi.org/10.1109/ted.2017.2712709
https://doi.org/10.1109/ted.2017.2712709
Publikováno v:
Journal of Alloys and Compounds. 707:162-166
This paper describes a high-performance p -type tin-oxide (SnO) thin film transistor (TFT) using fluorine plasma treatment on the SnO active channel layer. The influence of fluorine plasma treatment for this p -type SnO TFT device was also investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ec6c9740fb55708838db0e96e045289
https://doi.org/10.1016/j.jallcom.2016.11.294
https://doi.org/10.1016/j.jallcom.2016.11.294
Autor:
Chun-Hu Cheng, Yi-Wei Lin, Yueh Chin Lin, S. H. Chen, Chun-Yen Chang, Yu-Chien Chiu, W. J. Sun, Ming Huei Lin
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:Q58-Q62
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75290af89988cc1379ff4cc4a287a716
https://doi.org/10.1149/2.0261704jss
https://doi.org/10.1149/2.0261704jss
Autor:
Chun-Hu Cheng, Zhi Wei Zheng, Hsuan-Ling Kao, Yu-Chien Chiu, Guan-Lin Liou, Po-Hsuan Chen, Chun-Yen Chang, Yung-Hsien Wu, Sheng-Chieh Chang
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:Q53-Q57
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b407df84b9f1ca511d37acbe47ec41c
https://doi.org/10.1149/2.0251704jss
https://doi.org/10.1149/2.0251704jss
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 10:919-923
We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b1a7e5fb1f995eb6e2cc286a9458cef
https://doi.org/10.1002/pssr.201600287
https://doi.org/10.1002/pssr.201600287
Autor:
Yung-Hsien Wu, Po Chun Chen, Zhi-Wei Zheng, Hsiao-Hsuan Hsu, Chun-Yen Chang, Chun-Hu Cheng, Shiang-Shiou Yen, Yu-Chien Chiu
Publikováno v:
Journal of Display Technology. 12:224-227
In this paper, we investigated the bipolar conduction mechanism in thin-film transistors (TFTs) with oxygen plasma treatment on tin-oxide channel. The optimized p-type thin-oxide TFTs showed an on/off ratio of ${>}{\hbox{10}}^{4}$ , a threshold volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38a6824f0a3bb589355d0a1808dcf89b
https://doi.org/10.1109/jdt.2015.2457439
https://doi.org/10.1109/jdt.2015.2457439