Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Yu-Chieh Chien"'
Autor:
Ngoc Thanh Duong, Yufei Shi, Sifan Li, Yu‐Chieh Chien, Heng Xiang, Haofei Zheng, Peiyang Li, Lingqi Li, Yangwu Wu, Kah‐Wee Ang
Publikováno v:
Advanced Science, Vol 11, Iss 12, Pp n/a-n/a (2024)
Abstract The development of all‐in‐one devices for artificial visual systems offers an attractive solution in terms of energy efficiency and real‐time processing speed. In recent years, the proliferation of smart sensors in the growth of Intern
Externí odkaz:
https://doaj.org/article/6867812883464f81852c61a598c9084f
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)
Abstract Time‐series analysis and forecasting play a vital role in the fields of economics and engineering. Neuromorphic computing, particularly recurrent neural networks (RNNs), has emerged as an effective approach to address these tasks. Reservoi
Externí odkaz:
https://doaj.org/article/49f7048f1f054b038c16aac86fdc4625
Dynamic Ferroelectric Transistor‐Based Reservoir Computing for Spatiotemporal Information Processing
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)
Reservoir computing (RC) architecture which mimics the human brain is a fundamentally preferred method to process dynamical systems that evolve with time. However, the difficulty in generating rich reservoir states using two‐terminal devices remain
Externí odkaz:
https://doaj.org/article/ca690be3c691498f8ac9f76fd23e937f
Publikováno v:
Nanoscale Horizons; May2024, Vol. 9 Issue 5, p752-763, 12p
Publikováno v:
Small.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3479cc9a1cdf45bc3c7663768ec8b158
https://doi.org/10.1002/smll.202302842
https://doi.org/10.1002/smll.202302842
Autor:
Lingli Jiang, Hongyu Yu, Minghao He, Kah-Wee Ang, Fanming Zeng, Wei-Chih Cheng, Qing Wang, Yang Jiang, Wenmao Li, Zepeng Qiao, Yu-Chieh Chien
Publikováno v:
IEEE Transactions on Electron Devices. 68:3314-3319
In this article, a $\beta $ -Ga2O3 metal-interlayer-semiconductor Schottky barrier diode (MIS-SBD) using Al-reacted aluminum oxide as the interlayer is demonstrated for the first time and compared with conventional metal-semiconductor (MS) Schottky b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe636b15eea0bad9098ede6795b6a133
https://doi.org/10.1109/ted.2021.3081075
https://doi.org/10.1109/ted.2021.3081075
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Spiking neural network (SNN), where the information is evaluated recurrently through spikes, has manifested significant promises to minimize the energy expenditure in data-intensive machine learning and artificial intelligence. Among these applicatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::62bc58b7e52fe409997c9bcd2b5cb824
https://pubmed.ncbi.nlm.nih.gov/36366910
https://pubmed.ncbi.nlm.nih.gov/36366910
Autor:
Simon M. Sze, Yu-Chieh Chien, Ya-Ting Chien, Hong-Yi Tu, Jian-Jie Chen, Yu-Ching Tsao, Chuan-Wei Kuo, Yu-Lin Tsai, Tsung-Ming Tsai, Hong-Chih Chen, Ting-Chang Chang
Publikováno v:
IEEE Transactions on Electron Devices. 68:1654-1658
This work studies the effect of the location of the light shielding (LS) layer on negative bias illumination stress (NBIS) instability in self-aligned top-gate amorphous indium-gallium-zinc oxide thin-film transistors (SA-TG a-InGaZnO TFTs). Although
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::628709fa9f08ba75eb4f3fe4b01f4c71
https://doi.org/10.1109/ted.2021.3058195
https://doi.org/10.1109/ted.2021.3058195
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(30)
Coupling charge impurity scattering effects and charge-carrier modulation by doping can offer intriguing opportunities for atomic-level control of resistive switching (RS). Nonetheless, such effects have remained unexplored for memristive application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1be00c6e618c6b7e902d5a5944407a74
https://pubmed.ncbi.nlm.nih.gov/35610176
https://pubmed.ncbi.nlm.nih.gov/35610176
Autor:
Cedric Rolin, Ting-Chang Chang, Ravi Pendurthi, Jan Genoe, Manoj Nag, Yu-Chieh Chien, Horacio Londono Ramirez, Soeren Steudel
Publikováno v:
IEEE Electron Device Letters. 41:565-568
This paper analyzes the effect of high current under illumination stress (HCIS) in self-aligned amorphous indium gallium zinc oxide transistors with Al2O3 as high- $\kappa $ gate dielectric. A negative parallel threshold voltage $({V}_{T}$ ) shift wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9bd45c5c1dd9b6a07bb117599aeaaca
https://doi.org/10.1109/led.2020.2976616
https://doi.org/10.1109/led.2020.2976616