Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Yu-Chi Kang"'
Autor:
Yu-Chi Kang, 康育綺
107
The purpose of this study is to analyze the statistics contents in Lambacher Schweizer Mathematik (LSM) textbook which was published in Germany in 2003. We classify the topics by using the statistical cognitive analysis table and the graph-c
The purpose of this study is to analyze the statistics contents in Lambacher Schweizer Mathematik (LSM) textbook which was published in Germany in 2003. We classify the topics by using the statistical cognitive analysis table and the graph-c
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/gffu84
Autor:
Yu-chi Kang, 康煜琪
94
The thesis analyzed 1,247 individual investors who switched from phone-based to online trading in Taiwan from January 2004 to October 2005. We conclude that 1. Men and the younger preferred online trading than phone-based. Investors who had b
The thesis analyzed 1,247 individual investors who switched from phone-based to online trading in Taiwan from January 2004 to October 2005. We conclude that 1. Men and the younger preferred online trading than phone-based. Investors who had b
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/28655453167823626144
Autor:
Yu-Chi Kang, 康育綺
94
In this thesis, two heterojunction bipolar transistors (HBTs), were grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD), have been fabricated and investigated. First, by theoretical analysis and experiment results the DC
In this thesis, two heterojunction bipolar transistors (HBTs), were grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD), have been fabricated and investigated. First, by theoretical analysis and experiment results the DC
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/63957307635898050472
Publikováno v:
SID Symposium Digest of Technical Papers. 46:1278-1280
This paper presents a high speed intra panel interface which applies point to point topology, phase locked loop (PLL) type clock data recovery (CDR) and DC self-adjusting data encoder. The preliminary measurement result on Altera stratix5 FPGA platfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ababe2e7c2238dbec2597c69893b23b8
https://doi.org/10.1002/sdtp.10090
https://doi.org/10.1002/sdtp.10090
Autor:
Yu-Chi Kang, Shih-Ming Wang, Ming-Wei Lee, Ke-Horng Chen, Wei-Chung Chen, Hsin-Yu Luo, Chia-Ching Lin
Publikováno v:
IEEE Transactions on Power Electronics. 28:2366-2376
The stability of conventional constant on-time control buck converter is constrained by the time constant, which is the product of the output capacitor and its equivalent series resistance (ESR). Specialty polymer capacitor which is mostly used as ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c8b42d507f714a69b6ee7cf21cae425
https://doi.org/10.1109/tpel.2012.2215886
https://doi.org/10.1109/tpel.2012.2215886
Publikováno v:
Physica Scripta. :293-296
The characteristics of an InP/InGaAs pnp heterostructure-emitter bipolar transistor is investigated using theoretical analysis and experimental methods. Although the valence band discontinuity at the InP/InGaAs heterojunction is relatively large, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::786133cc127e43f88c1704405c2f54bf
https://doi.org/10.1088/0031-8949/2007/t129/065
https://doi.org/10.1088/0031-8949/2007/t129/065
Publikováno v:
Materials Chemistry and Physics. 100:340-344
The sequential tunneling behavior in InP/InGaAs superlattice-emitter bipolar transistors is demonstrated by theoretical analysis and experimental results. The tunneling mechanism in the InP/InGaAs superlattice structures is analyzed by theoretical ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aea2f8b1b4e425239a0b2d718d0f2ed
https://doi.org/10.1016/j.matchemphys.2006.01.008
https://doi.org/10.1016/j.matchemphys.2006.01.008
Publikováno v:
ECS Transactions. 2:223-227
The performance of an InP/InGaAs pnp heterostructure-emitter bipolar transistor is first demonstrated. Though the valence band discontinuity at InP/InGaAs heterojunction is relatively large, the addition of a heavy-doped as well as thin p+-InGaAs emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d2bb864a61faf760c537fbe84b252c3
https://doi.org/10.1149/1.2204895
https://doi.org/10.1149/1.2204895
Publikováno v:
Solid-State Electronics. 50:468-472
In this paper, the characteristics and device mechanism of InP/InGaAs pnp δ-doped heterojunction bipolar transistor are demonstrated. The additions of a δ-doped sheet and two spacer layers efficiently eliminate the potential spike at emitter–base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc368898fe1b8e0a0509134829ac5f96
https://doi.org/10.1016/j.sse.2006.02.006
https://doi.org/10.1016/j.sse.2006.02.006
Autor:
Yu-Chi Kang, Jung-Hui Tsai
Publikováno v:
IEEE Transactions on Electron Devices. 53:1265-1267
The dc performance of a novel InP/InGaAs p-n-p heterostructure-emitter bipolar transistor is first demonstrated. Though the valence band discontinuity at an InP/InGaAs heterojunction is relatively large, the addition of a heavy doped as well as thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11a53bfcd3a2ad8276fec65066256ad1
https://doi.org/10.1109/ted.2006.872691
https://doi.org/10.1109/ted.2006.872691