Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Yu-Che Chou"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 137-143 (2021)
In this work, we improved the performance of germanium (Ge) channel Charge Trapping MemTransistors (CTMTs) as synaptic device by using Ti-doped HfO2 as charge trapping layer (CTL). We manipulated the amount of Ti dopant within the HfO2 CTL to perform
Externí odkaz:
https://doaj.org/article/62e12bba226f495b903b4fba2b4e982c
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 572-576 (2020)
In this work, we investigated the effects of the crystal phase of ZrO2 on charge trapping memtransistors (CTMTs) as synaptic devices for neural network applications. The ZrO2 deposited through thermal (t-ZrO2) atomic layer deposition (ALD) and plasma
Externí odkaz:
https://doaj.org/article/b759a893e8764a5c873b38a262121ebf
Autor:
YU-CHE CHOU, 周裕哲
106
The methodology of study to apply the technology in real situations for environmental detection and data collection at different places and period of time. The data will be uploaded to Google Drive. The physical impact of human caused by sur
The methodology of study to apply the technology in real situations for environmental detection and data collection at different places and period of time. The data will be uploaded to Google Drive. The physical impact of human caused by sur
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/95f32n
Autor:
Yu-Che Chou, 周裕哲
97
Knowledge is becoming increasingly important assets in businesses. The main issue is how businesses can encourage employees to contribute knowledge. Some effort has been made in understanding factors influencing user’s knowledge contributio
Knowledge is becoming increasingly important assets in businesses. The main issue is how businesses can encourage employees to contribute knowledge. Some effort has been made in understanding factors influencing user’s knowledge contributio
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/05073007238796322931
Autor:
Yu-Che Chou
Publikováno v:
International Journal of High School Research; Jun2024, Vol. 6 Issue 6, p70-75, 6p
Autor:
Yu-Che Chou, 周祐徹
94
With Social development, Scientific and technological progress, technology will become the essential and important element. No matter in the science and technology, economy and transnational competition, all rely on technology. Therefore, it
With Social development, Scientific and technological progress, technology will become the essential and important element. No matter in the science and technology, economy and transnational competition, all rely on technology. Therefore, it
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/82866748048600355430
Autor:
Yu-che Chou, 周毓哲
90
Services often perform in the customer’s presence, so errors are inevitable. Customers often react strongly to service failures, so it is critical that an organization’s recovery efforts be equally strong and effective. According to the d
Services often perform in the customer’s presence, so errors are inevitable. Customers often react strongly to service failures, so it is critical that an organization’s recovery efforts be equally strong and effective. According to the d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/74996191114774442283
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 137-143 (2021)
In this work, we improved the performance of germanium (Ge) channel Charge Trapping MemTransistors (CTMTs) as synaptic device by using Ti-doped HfO2 as charge trapping layer (CTL). We manipulated the amount of Ti dopant within the HfO2 CTL to perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ee12a2e147ab8d21250e8c657936ddf
https://doi.org/10.1109/jeds.2020.3045194
https://doi.org/10.1109/jeds.2020.3045194
Autor:
Zhihao Yu, Lin-Yun Huang, Lain-Jong Li, Chao-Ching Cheng, Chao-Hsin Chien, Yun-Yan Chung, Wei-Chen Chueh, Shin-Yuan Wang, Li-Cheng Teng, Yu-Che Chou, Terry Yi-Tse Hung, Wen-Ho Chang, Wan-Hsuan Chung
Publikováno v:
IEEE Electron Device Letters. 41:1649-1652
The development of high-accuracy analog synapse deep neural networks entails devising novel materials and innovative memory structures. We demonstrated an analog synapse with contralateral gates based on a two-dimensional (2D) field-effect transistor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b70c2daf3d7702ca6d14ecfde9d0f386
https://doi.org/10.1109/led.2020.3026931
https://doi.org/10.1109/led.2020.3026931
Publikováno v:
IEEE Transactions on Electron Devices. 67:3605-3609
In this work, we fabricated charge-trapping MemTransistors (CTMTs) on a germanium (Ge) substrate with a single-charge-trapping-layer gate-stack or a double-charge-trapping-layer gate-stack. We first constructed the energy band diagram of two gate sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9625558aa15d49714d9aeb661040a241
https://doi.org/10.1109/ted.2020.3008887
https://doi.org/10.1109/ted.2020.3008887