Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yu-Chang Jong"'
Autor:
H.-L. Chou, Y.-H. Lee, C.-Y. Yang, Chen Chia-Chiang, Jesse Wang, P.-C. Su, H.-T. Lu, David Ho, Zhe-Yi Wang, Yu-Hui Huang, Yu-Chang Jong
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
With continuous improvement of the figure-of-merit (RdS on vs. BVd ss ) in high-voltage device, HCI induced device burnout emerged. In this work, we showed that the mechanism of burnout is due to HCI assisted TDDB (HA-TDDB) as evident from various Vg
Autor:
Ruey-Hsin Liou, Hsueh-Liang Chou, Jeng Gong, Yu-Chang Jong, J. C. W. Ng, Chih-Fang Huang, Hsiao-Chin Tuan
Publikováno v:
IEEE Transactions on Electron Devices. 59:3042-3047
In this paper, it is the first time that the effect of self-heating of LDMOS transistors operating in the so-called expansion regime of the output characteristics is studied. Experimental characterization and numerical simulations are used to demonst
Autor:
Hau-yan Lu, Ming-Cheng Lin, Yu-Chang Jong, J. L. Tsai, H. C. Tuan, Alex Kalnitsky, Chen-Yi Lee, Haw-Yun Wu, Nan-Ying Yang, C. B. Wu, L. Chu
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
The behavior of the fully-isolated laterally diffused MOSFETs (LDMOS) during reverse recovery of parasitic diodes such as buck converter or white light emitting diode (WLED) driver application was presented. The fully-isolated MOSFETs with parasitic