Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Yu Zhu Gao"'
Publikováno v:
International Journal of Ophthalmology, Vol 14, Iss 5, Pp 759-765 (2021)
AIM: To describe the clinical characteristics and analyze prognostic factors that influence visual outcome in 669 patients with intraocular foreign bodies (IOFBs). METHODS: Medical records of 669 patients with IOFBs from West China Hospital were revi
Externí odkaz:
https://doaj.org/article/636167b7396f4796bc5eb0f9f9e67d66
Publikováno v:
Molecular Neurobiology. 60:3210-3226
Publikováno v:
Neuropharmacology. 225:109382
Sepsis-associated encephalopathy (SAE) is commonly defined as diffuse brain dysfunction and can manifest as delirium to coma. Accumulating evidence has suggested that perineuronal net (PNN) plays an important role in the modulation of the synaptic pl
Autor:
Xin-miao Wu, Yu-zhu Gao, Ting-ting Zhu, Han-wen Gu, Jian-hua Tong, Jie Sun, Jian-jun Yang, Mu-huo Ji
Publikováno v:
Neuroimmunomodulation.
Introduction: Inflammation in early life is a risk factor for the development of neuropsychiatric diseases later in adolescence and adulthood, yet the underlying mechanism remains elusive. In the present study, we performed an integrated proteomic an
Autor:
Ming-Jie, Mao, Hui-Ling, Yu, Ya-Zhou, Wen, Xiao-Yun, Sun, Chen-Yang, Xu, Yu-Zhu, Gao, Ming, Jiang, Hong-Mei, Yuan, Shan-Wu, Feng
Publikováno v:
Behavioural Brain Research. 434:114027
Maternal immune activation (MIA) during pregnancy is considered a risk factor for neurodevelopment in the offspring, resulting in behavioral abnormalities. Furthermore, adolescence is a vulnerable period for developing different psycho-cognitive defi
Autor:
Yasuhiro Hayakawa, Tadanobu Koyama, Takamitsu Makino, Hirofumi Kan, Ji Jun Li, Xiu Ying Gong, Yan Bin Feng, Yu Zhu Gao
Publikováno v:
Optik. 142:68-72
In this study, the improvement of detectivities D* at the wavelength of 8 and 9 μm of InAs0.07Sb0.93 photoconductors are provided. InAs0.07Sb0.93, InAs0.05Sb0.95 and InAs0.03Sb0.97 thick epilayers were grown on InAs substrates by melt epitaxy (ME).
Publikováno v:
Optoelectronics Letters. 11:352-355
Uncooled InAsSb photoconductors were fabricated. The photoconductors were based on InAs0.05Sb0.95 and InAs0.09Sb0.91 thick epilayers grown on InAs substrates by melt epitaxy (ME). Ge immersion lenses were set on the photoconductors. The cutoff wavele
Autor:
Takamitsu Makino, Yu-zhu Gao, Yan-bin Feng, Xiuying Gong, Tadanobu Koyama, Yasuhiro Hayakawa, Guang-hui Wu, Hirofumi Kan
Publikováno v:
International Journal of Minerals, Metallurgy, and Materials. 20:393-396
InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy (ME). Scanning electron microscopy observations show that the interface between the epilayers and substrates is flat, i
Autor:
Takamitsu Makino, Yan Bin Feng, Tadanobu Koyama, Xiu Ying Gong, Yasuhiro Hayakawa, Yu Zhu Gao, Guang Hui Wu, Hirofumi Kan
Publikováno v:
Advanced Materials Research. 668:664-669
High sensitivity uncooled InAsSb photoconductors with cutoff wavelengths longer than 8 mm were experimentally validated. The detectors were fabricated using InAs0.052Sb0.948 and InAs0.023Sb0.977 single crystals grown on InAs substrates by melt epitax
Publikováno v:
Japanese Journal of Applied Physics. 42:4203-4206
We grew, for the first time, InNAsSb single crystals with a room temperature cutoff wavelength of 11–13.5 µm on (100) InAs substrates by melt epitaxy (ME). The crystals were characterized using X-ray diffraction, electron-probe microanalysis (EPMA