Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yu V Kurnyavko"'
Autor:
V I Romantsevich, R. V. Chernov, O. O. Bagaeva, A. V. Ivanov, V. A. Simakov, A. I. Danilov, R. R. Galiev, Yu V Kurnyavko, V D Kurnosov, Maxim A. Ladugin, K V Kurnosov, V.V. Shishkov, A. A. Marmalyuk
Publikováno v:
Quantum Electronics. 50:143-146
High-power semiconductor laser systems based on 1.5 – 1.6 μm single-frequency distributed feedback (DFB) lasers with a sidewall Bragg diffraction grating are developed and their current – voltage, light – current, and spectral characteristics
Autor:
A. V. Lobintsov, V V Krichevskii, Yu V Kurnyavko, T. A. Bagaev, Nikita A. Pikhtin, V P Konyaev, S. M. Sapozhnikov, A. A. Podoskin, V. A. Simakov, A. A. Marmalyuk, A. I. Danilov, A A Padalitsa, Sergey O. Slipchenko, Maxim A. Ladugin
Publikováno v:
Quantum Electronics. 50:1001-1003
A triple laser – thyristor, i. e., a semiconductor laser with three emitting sections monolithically integrated with an electronic switch (thyristor) is experimentally studied. For comparison, the output characteristics of single and double laser
Autor:
A. I. Danilov, Maxim A. Ladugin, Yu V Kurnyavko, A. V. Ivanov, V. A. Simakov, V I Romantsevich, V D Kurnosov, Yu. L. Ryaboshtan, K V Kurnosov, R. V. Chernov, A. A. Marmalyuk, O. O. Bagaeva, V. N. Svetogorov
Publikováno v:
Quantum Electronics. 50:600-602
High-power 1.5 – 1.6-μm semiconductor lasers with an asymmetric periodic optically coupled waveguide are developed and their current – voltage, light – current, and spectral characteristics are experimentally studied. The characteristics of th
Autor:
A. V. Lobintsov, A A Padalitsa, Sergey O. Slipchenko, S. M. Sapozhnikov, Nikita A. Pikhtin, V P Konyaev, A. I. Danilov, A. A. Marmalyuk, T. A. Bagaev, Yu V Kurnyavko, V. A. Simakov, A. A. Podoskin, V V Krichevskii, M. V. Zverkov, Maxim A. Ladugin
Publikováno v:
Quantum Electronics. 49:1011-1013
Comparative experiments are performed on a semiconductor laser with different numbers (one or two) of emitting sections monolithically integrated with an electronic switch (thyristor). It is shown that the functional integration of a laser with a thy
Autor:
V D Kurnosov, Yu V Kurnyavko, A. I. Danilov, A. V. Ivanov, V I Romantsevich, A. A. Marmalyuk, O. O. Bagaeva, R. V. Chernov, V. A. Simakov, K V Kurnosov
Publikováno v:
Quantum Electronics. 48:495-501
Autor:
Yu V Kurnyavko, I. I. Zasavitskii, A. V. Lobintsov, Andrey B. Krysa, N. Yu Kovbasa, P. V. Gorlachuk, N. A. Raspopov, Dmitry G. Revin
Publikováno v:
Quantum Electronics. 48:472-475
Autor:
T. A. Bagaev, A. A. Marmalyuk, I. V. Yarotskaya, P. V. Gorlachuk, Yu V Kurnyavko, S. S. Zarubin, I. I. Zasavitskii, V. A. Simakov, S. M. Sapozhnikov, A. V. Lobintsov, A. Yu. Andreev, K. Yu. Telegin, A A Padalitsa, Maxim A. Ladugin, A. I. Danilov
Publikováno v:
Inorganic Materials. 53:891-895
Short-period GaAs/AlGaAs superlattices, an active region, and a quantum cascade laser heterostructure have been grown by metalorganic vapor phase epitaxy, and their characteristics have been studied by high-resolution X-ray diffraction, transmission
Autor:
K. V. Kurnosov, A. S. Meshkov, V. D. Kurnosov, A. V. Lobintsov, V. N. Penkin, M. B. Uspenskii, Yu. V. Kurnyavko, V I Romantsevich, R. V. Chernov, A. V. Ivanov
Publikováno v:
Technical Physics. 61:1525-1530
We have reported on the results of analysis of the operating time of conventional laser diodes and diodes with noninjecting output sections. The reasons for shorter operating time of diodes with a single anti-reflection face of the cavity compared to
Autor:
Yu V Kurnyavko, V. R. Shidlovskii, V N Luk'yanov, S. N. Il'chenko, S D Yakubovich, E V Andreeva
Publikováno v:
Quantum Electronics. 46:594-596
We report superluminescent diodes (SLDs) with three ridged active channels, each having a width of 3.5 μm, based on one 'bulk' and two quantum-well heterostructures. At a cw output power greater than 100 mW, the emission spectra of these SLDs posses
Autor:
Andrey B. Krysa, N. A. Raspopov, A. V. Lobintsov, P. V. Gorlachuk, Yu V Kurnyavko, Dmitry G. Revin, N. Yu Kovbasa, I. I. Zasavitskii
Publikováno v:
KnE Engineering. 3:236
A quantum cascade laser based on a strain-compensated Ga0.4In0.6As/Al0.58In0.42As heteropair is developed, which operates in a pulse mode in the wavelength range of 5.5–5.6 µm at a temperature of up to 350 K. Such characteristics are obtained due